Electron emission properties of cold cathode based on silicon-rich silicon dioxide films prepared by magnetron reaction sputtering

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Silicon-rich silicon dioxide (SRSO ) films were formed through deposition of SiOx films by magnetron reaction sputtering together with subsequent rapid temperature annealing treatment. The emission efficiency and emission current density of a cold cathode based on SRSO film reach 10.88% and 25.78/jA/cm∗ at the applied voltage of 19 V.

Original languageEnglish
Title of host publication23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016
PublisherSociety for Information Display
Pages1113-1116
Number of pages4
ISBN (Electronic)9781510845510
StatePublished - 2016
Event23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016 - Fukuoka, Japan
Duration: 7 Dec 20169 Dec 2016

Publication series

Name23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016
Volume2

Conference

Conference23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016
Country/TerritoryJapan
CityFukuoka
Period7/12/169/12/16

Keywords

  • Electron emission property
  • Magnetron reaction sputtering
  • Silicon-rich silicon dioxide films

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