Abstract
In this communication, we propose a novel method to electrochemically modify hydrogen-terminated diamond surface in MISFETs with LiF dielectric at room temperature. The chemical reaction is 2F- + C–H+2h+→C–F + HF. According to measurement results of X-ray photoelectron spectroscopy on diamond, C–F bonds were produced after electrochemistry modification. A model was proposed to explain the electrochemistry modification on MISFETs. In this model, the theoretical electrolysis voltage of F− was calculated to be −3.8V, which was consistent with the experimental value of -5V.
| Original language | English |
|---|---|
| Pages (from-to) | 83-87 |
| Number of pages | 5 |
| Journal | Carbon |
| Volume | 176 |
| DOIs | |
| State | Published - May 2021 |
Keywords
- Diamond
- Electrochemical
- F-diamond
- MISFET