Electro-shape-memory effect in Mn-doped (Pb, Sr)TiO3 ceramics

Liu Yang; Wenfeng Liu; Wei Chen; Yu Wang; Xiaolong Cao; Xiaobing Ren

doi:10.1016/j.msea.2005.12.078

Electro-shape-memory effect in Mn-doped (Pb, Sr)TiO₃ ceramics

Liu Yang
, Wenfeng Liu
, Wei Chen
, Yu Wang
, Xiaolong Cao
, Xiaobing Ren

Xi'an Jiaotong University
National Institute for Materials Science Tsukuba

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Electric-field-induced strain behavior of 0.5 mol% Mn-doped (Pb_0.4, Sr_0.6)TiO₃ ceramics was studied in this paper. Through utilizing a new mechanism, which is point-defect-mediated domain switching, a double hysteresis and relatively large recoverable strain of 0.1% at 3000 V/mm were obtained from the samples after aging at room temperature. This behavior can be considered as a new kind of shape memory effect due to the reversibility and the 'digital-like' jump in electrostrain, which is controlled by electric field. The present result suggests that utilizing domain-switching can be a new way to improve the performance of the electrostrain effect of Pb-based ceramics.

Original language	English
Pages (from-to)	176-180
Number of pages	5
Journal	Materials Science and Engineering: A
Volume	438-440
Issue number	SPEC. ISS.
DOIs	https://doi.org/10.1016/j.msea.2005.12.078
State	Published - 25 Nov 2006

Keywords

(Pb, Sr)TiO
Electro-shape-memory
Electrostrain
Ferroelectrics
Point-defect symmetry

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10.1016/j.msea.2005.12.078

Cite this

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title = "Electro-shape-memory effect in Mn-doped (Pb, Sr)TiO3 ceramics",

abstract = "Electric-field-induced strain behavior of 0.5 mol\% Mn-doped (Pb0.4, Sr0.6)TiO3 ceramics was studied in this paper. Through utilizing a new mechanism, which is point-defect-mediated domain switching, a double hysteresis and relatively large recoverable strain of 0.1\% at 3000 V/mm were obtained from the samples after aging at room temperature. This behavior can be considered as a new kind of shape memory effect due to the reversibility and the 'digital-like' jump in electrostrain, which is controlled by electric field. The present result suggests that utilizing domain-switching can be a new way to improve the performance of the electrostrain effect of Pb-based ceramics.",

keywords = "(Pb, Sr)TiO, Electro-shape-memory, Electrostrain, Ferroelectrics, Point-defect symmetry",

author = "Liu Yang and Wenfeng Liu and Wei Chen and Yu Wang and Xiaolong Cao and Xiaobing Ren",

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doi = "10.1016/j.msea.2005.12.078",

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TY - JOUR

T1 - Electro-shape-memory effect in Mn-doped (Pb, Sr)TiO3 ceramics

AU - Yang, Liu

AU - Liu, Wenfeng

AU - Chen, Wei

AU - Wang, Yu

AU - Cao, Xiaolong

AU - Ren, Xiaobing

PY - 2006/11/25

Y1 - 2006/11/25

N2 - Electric-field-induced strain behavior of 0.5 mol% Mn-doped (Pb0.4, Sr0.6)TiO3 ceramics was studied in this paper. Through utilizing a new mechanism, which is point-defect-mediated domain switching, a double hysteresis and relatively large recoverable strain of 0.1% at 3000 V/mm were obtained from the samples after aging at room temperature. This behavior can be considered as a new kind of shape memory effect due to the reversibility and the 'digital-like' jump in electrostrain, which is controlled by electric field. The present result suggests that utilizing domain-switching can be a new way to improve the performance of the electrostrain effect of Pb-based ceramics.

AB - Electric-field-induced strain behavior of 0.5 mol% Mn-doped (Pb0.4, Sr0.6)TiO3 ceramics was studied in this paper. Through utilizing a new mechanism, which is point-defect-mediated domain switching, a double hysteresis and relatively large recoverable strain of 0.1% at 3000 V/mm were obtained from the samples after aging at room temperature. This behavior can be considered as a new kind of shape memory effect due to the reversibility and the 'digital-like' jump in electrostrain, which is controlled by electric field. The present result suggests that utilizing domain-switching can be a new way to improve the performance of the electrostrain effect of Pb-based ceramics.

KW - (Pb, Sr)TiO

KW - Electro-shape-memory

KW - Electrostrain

KW - Ferroelectrics

KW - Point-defect symmetry

UR - https://www.scopus.com/pages/publications/33750462765

U2 - 10.1016/j.msea.2005.12.078

DO - 10.1016/j.msea.2005.12.078

M3 - 文章

AN - SCOPUS:33750462765

SN - 0921-5093

VL - 438-440

SP - 176

EP - 180

JO - Materials Science and Engineering: A

JF - Materials Science and Engineering: A

IS - SPEC. ISS.

ER -

Electro-shape-memory effect in Mn-doped (Pb, Sr)TiO₃ ceramics

Abstract

Keywords

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