Electro and photon double-driven non-volatile and non-destructive readout memory in Pt/Bi0.9Eu0.1FeO3/Nb:SrTiO3 heterostructures

Maocai Wei; Meifeng Liu; Lun Yang; Bo Xie; Xiang Li; Xiuzhang Wang; Xiangyang Cheng; Yongdan Zhu; Zijiong Li; Yuling Su; Meiya Li; Zhongqiang Hu; Jun Ming Liu

doi:10.1016/j.ceramint.2019.10.256

Electro and photon double-driven non-volatile and non-destructive readout memory in Pt/Bi_0.9Eu_0.1FeO₃/Nb:SrTiO₃ heterostructures

Maocai Wei
, Meifeng Liu
, Lun Yang
, Bo Xie
, Xiang Li
, Xiuzhang Wang
, Xiangyang Cheng
, Yongdan Zhu
, Zijiong Li
, Yuling Su
, Meiya Li
, Zhongqiang Hu
, Jun Ming Liu

Faculty of Electronic and Information Engineering

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

Ferroelectric resistive switching has recently attracted considerable attention as a promising candidate for next-generation non-volatile memory. In this work, we report an electro and photon double-driven bipolar resistive switching behavior in Pt /Bi_0.9Eu_0.1FeO₃ (BEFO) /Nb-doped SrTiO₃ (NSTO) heterostructures prepared via pulsed laser deposition. In addition to the polarization-based control of the resistive memory, a switchable photovoltaic effect is observed that can be used to detect the polarization direction non-destructively. Significantly, the electric field-modulated interfacial barrier can be further affected by photon-generated carriers. This phenomenon is attributed to the barrier modulation in the Pt /BEFO and BEFO /NSTO interfaces by electric field and photon excitation. These results indicate the feasibility of non-volatile and non-destructive readout from ferroelectric memory.

Original language	English
Pages (from-to)	5126-5131
Number of pages	6
Journal	Ceramics International
Volume	46
Issue number	4
DOIs	https://doi.org/10.1016/j.ceramint.2019.10.256
State	Published - Mar 2020

Keywords

Electro and photon double-driven
Ferroelectric photovoltaic
Ferroelectric resistive switching
Non-destructive readout
Schottky barrier

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This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/j.ceramint.2019.10.256

Cite this

@article{47c9d7e8fee842bab69a8c1971979aa1,

title = "Electro and photon double-driven non-volatile and non-destructive readout memory in Pt/Bi0.9Eu0.1FeO3/Nb:SrTiO3 heterostructures",

abstract = "Ferroelectric resistive switching has recently attracted considerable attention as a promising candidate for next-generation non-volatile memory. In this work, we report an electro and photon double-driven bipolar resistive switching behavior in Pt /Bi0.9Eu0.1FeO3 (BEFO) /Nb-doped SrTiO3 (NSTO) heterostructures prepared via pulsed laser deposition. In addition to the polarization-based control of the resistive memory, a switchable photovoltaic effect is observed that can be used to detect the polarization direction non-destructively. Significantly, the electric field-modulated interfacial barrier can be further affected by photon-generated carriers. This phenomenon is attributed to the barrier modulation in the Pt /BEFO and BEFO /NSTO interfaces by electric field and photon excitation. These results indicate the feasibility of non-volatile and non-destructive readout from ferroelectric memory.",

keywords = "Electro and photon double-driven, Ferroelectric photovoltaic, Ferroelectric resistive switching, Non-destructive readout, Schottky barrier",

author = "Maocai Wei and Meifeng Liu and Lun Yang and Bo Xie and Xiang Li and Xiuzhang Wang and Xiangyang Cheng and Yongdan Zhu and Zijiong Li and Yuling Su and Meiya Li and Zhongqiang Hu and Liu, \{Jun Ming\}",

note = "Publisher Copyright: {\textcopyright} 2019 Elsevier Ltd and Techna Group S.r.l.",

year = "2020",

month = mar,

doi = "10.1016/j.ceramint.2019.10.256",

language = "英语",

volume = "46",

pages = "5126--5131",

journal = "Ceramics International",

issn = "0272-8842",

publisher = "Elsevier Ltd",

number = "4",

}

TY - JOUR

T1 - Electro and photon double-driven non-volatile and non-destructive readout memory in Pt/Bi0.9Eu0.1FeO3/Nb:SrTiO3 heterostructures

AU - Wei, Maocai

AU - Liu, Meifeng

AU - Yang, Lun

AU - Xie, Bo

AU - Li, Xiang

AU - Wang, Xiuzhang

AU - Cheng, Xiangyang

AU - Zhu, Yongdan

AU - Li, Zijiong

AU - Su, Yuling

AU - Li, Meiya

AU - Hu, Zhongqiang

AU - Liu, Jun Ming

PY - 2020/3

Y1 - 2020/3

N2 - Ferroelectric resistive switching has recently attracted considerable attention as a promising candidate for next-generation non-volatile memory. In this work, we report an electro and photon double-driven bipolar resistive switching behavior in Pt /Bi0.9Eu0.1FeO3 (BEFO) /Nb-doped SrTiO3 (NSTO) heterostructures prepared via pulsed laser deposition. In addition to the polarization-based control of the resistive memory, a switchable photovoltaic effect is observed that can be used to detect the polarization direction non-destructively. Significantly, the electric field-modulated interfacial barrier can be further affected by photon-generated carriers. This phenomenon is attributed to the barrier modulation in the Pt /BEFO and BEFO /NSTO interfaces by electric field and photon excitation. These results indicate the feasibility of non-volatile and non-destructive readout from ferroelectric memory.

AB - Ferroelectric resistive switching has recently attracted considerable attention as a promising candidate for next-generation non-volatile memory. In this work, we report an electro and photon double-driven bipolar resistive switching behavior in Pt /Bi0.9Eu0.1FeO3 (BEFO) /Nb-doped SrTiO3 (NSTO) heterostructures prepared via pulsed laser deposition. In addition to the polarization-based control of the resistive memory, a switchable photovoltaic effect is observed that can be used to detect the polarization direction non-destructively. Significantly, the electric field-modulated interfacial barrier can be further affected by photon-generated carriers. This phenomenon is attributed to the barrier modulation in the Pt /BEFO and BEFO /NSTO interfaces by electric field and photon excitation. These results indicate the feasibility of non-volatile and non-destructive readout from ferroelectric memory.

KW - Electro and photon double-driven

KW - Ferroelectric photovoltaic

KW - Ferroelectric resistive switching

KW - Non-destructive readout

KW - Schottky barrier

UR - https://www.scopus.com/pages/publications/85074324410

U2 - 10.1016/j.ceramint.2019.10.256

DO - 10.1016/j.ceramint.2019.10.256

M3 - 文章

AN - SCOPUS:85074324410

SN - 0272-8842

VL - 46

SP - 5126

EP - 5131

JO - Ceramics International

JF - Ceramics International

IS - 4

ER -