Electrical switching of Ge2Sb2Te5 memory cells based on silicon photonic waveguide microheaters

Wen Zhou; Xuan Li; Nathan Youngblood; Wolfram H.P. Pernice; C. David Wright; Harish Bhaskaran

Electrical switching of Ge₂Sb₂Te₅ memory cells based on silicon photonic waveguide microheaters

Wen Zhou
, Xuan Li
, Nathan Youngblood
, Wolfram H.P. Pernice
, C. David Wright
, Harish Bhaskaran

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

We demonstrate binary and multilevel electrical programming of the phase change material Ge₂Sb₂Te₅ (GST) memory cells based on ion-implanted silicon-on-insulator (SOI) waveguide microheaters. GST cells can be reversibly switched by using low-amplitude electric pulses.

Original language	English
Title of host publication	2022 Conference on Lasers and Electro-Optics, CLEO 2022 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781957171050
State	Published - 2022
Externally published	Yes
Event	2022 Conference on Lasers and Electro-Optics, CLEO 2022 - San Jose, United States Duration: 15 May 2022 → 20 May 2022

Publication series

Name	2022 Conference on Lasers and Electro-Optics, CLEO 2022 - Proceedings

Conference

Conference	2022 Conference on Lasers and Electro-Optics, CLEO 2022
Country/Territory	United States
City	San Jose
Period	15/05/22 → 20/05/22

Cite this

Zhou, W., Li, X., Youngblood, N., Pernice, W. H. P., Wright, C. D., & Bhaskaran, H. (2022). Electrical switching of Ge₂Sb₂Te₅ memory cells based on silicon photonic waveguide microheaters. In 2022 Conference on Lasers and Electro-Optics, CLEO 2022 - Proceedings Article SF2N.5 (2022 Conference on Lasers and Electro-Optics, CLEO 2022 - Proceedings). Institute of Electrical and Electronics Engineers Inc..

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title = "Electrical switching of Ge2Sb2Te5 memory cells based on silicon photonic waveguide microheaters",

abstract = "We demonstrate binary and multilevel electrical programming of the phase change material Ge2Sb2Te5 (GST) memory cells based on ion-implanted silicon-on-insulator (SOI) waveguide microheaters. GST cells can be reversibly switched by using low-amplitude electric pulses.",

author = "Wen Zhou and Xuan Li and Nathan Youngblood and Pernice, \{Wolfram H.P.\} and Wright, \{C. David\} and Harish Bhaskaran",

note = "Publisher Copyright: {\textcopyright} Optica Publishing Group 2022, {\textcopyright} 2022 The Author(s); 2022 Conference on Lasers and Electro-Optics, CLEO 2022 ; Conference date: 15-05-2022 Through 20-05-2022",

year = "2022",

language = "英语",

series = "2022 Conference on Lasers and Electro-Optics, CLEO 2022 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2022 Conference on Lasers and Electro-Optics, CLEO 2022 - Proceedings",

}

Zhou, W, Li, X, Youngblood, N, Pernice, WHP, Wright, CD & Bhaskaran, H 2022, Electrical switching of Ge₂Sb₂Te₅ memory cells based on silicon photonic waveguide microheaters. in 2022 Conference on Lasers and Electro-Optics, CLEO 2022 - Proceedings., SF2N.5, 2022 Conference on Lasers and Electro-Optics, CLEO 2022 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 2022 Conference on Lasers and Electro-Optics, CLEO 2022, San Jose, United States, 15/05/22.

Electrical switching of Ge₂Sb₂Te₅ memory cells based on silicon photonic waveguide microheaters. / Zhou, Wen; Li, Xuan; Youngblood, Nathan et al.
2022 Conference on Lasers and Electro-Optics, CLEO 2022 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2022. SF2N.5 (2022 Conference on Lasers and Electro-Optics, CLEO 2022 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Electrical switching of Ge2Sb2Te5 memory cells based on silicon photonic waveguide microheaters

AU - Zhou, Wen

AU - Li, Xuan

AU - Youngblood, Nathan

AU - Pernice, Wolfram H.P.

AU - Wright, C. David

AU - Bhaskaran, Harish

PY - 2022

Y1 - 2022

N2 - We demonstrate binary and multilevel electrical programming of the phase change material Ge2Sb2Te5 (GST) memory cells based on ion-implanted silicon-on-insulator (SOI) waveguide microheaters. GST cells can be reversibly switched by using low-amplitude electric pulses.

AB - We demonstrate binary and multilevel electrical programming of the phase change material Ge2Sb2Te5 (GST) memory cells based on ion-implanted silicon-on-insulator (SOI) waveguide microheaters. GST cells can be reversibly switched by using low-amplitude electric pulses.

UR - https://www.scopus.com/pages/publications/85139981350

M3 - 会议稿件

AN - SCOPUS:85139981350

T3 - 2022 Conference on Lasers and Electro-Optics, CLEO 2022 - Proceedings

BT - 2022 Conference on Lasers and Electro-Optics, CLEO 2022 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2022 Conference on Lasers and Electro-Optics, CLEO 2022

Y2 - 15 May 2022 through 20 May 2022

ER -

Zhou W, Li X, Youngblood N, Pernice WHP, Wright CD, Bhaskaran H. Electrical switching of Ge₂Sb₂Te₅ memory cells based on silicon photonic waveguide microheaters. In 2022 Conference on Lasers and Electro-Optics, CLEO 2022 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2022. SF2N.5. (2022 Conference on Lasers and Electro-Optics, CLEO 2022 - Proceedings).

Electrical switching of Ge₂Sb₂Te₅ memory cells based on silicon photonic waveguide microheaters

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