Electrical switching of Ge2Sb2Te5 memory cells based on silicon photonic waveguide microheaters

Wen Zhou; Xuan Li; Nathan Youngblood; Wolfram H.P. Pernice; C. David Wright; Harish Bhaskaran

Electrical switching of Ge₂Sb₂Te₅ memory cells based on silicon photonic waveguide microheaters

Wen Zhou
, Xuan Li
, Nathan Youngblood
, Wolfram H.P. Pernice
, C. David Wright
, Harish Bhaskaran

Research output: Contribution to journal › Conference article › peer-review

Abstract

We demonstrate binary and multilevel electrical programming of the phase change material Ge2Sb2Te5 (GST) memory cells based on ion-implanted silicon-on-insulator (SOI) waveguide microheaters. GST cells can be reversibly switched by using low-amplitude electric pulses.

Original language	English
Article number	SF2N.5
Journal	Optics InfoBase Conference Papers
State	Published - 2022
Externally published	Yes
Event	CLEO: Science and Innovations, S and I 2022 - San Jose, United States Duration: 15 May 2022 → 20 May 2022

Cite this

@article{a228b4dec2534fc682356d56e2c3e404,

title = "Electrical switching of Ge2Sb2Te5 memory cells based on silicon photonic waveguide microheaters",

abstract = "We demonstrate binary and multilevel electrical programming of the phase change material Ge2Sb2Te5 (GST) memory cells based on ion-implanted silicon-on-insulator (SOI) waveguide microheaters. GST cells can be reversibly switched by using low-amplitude electric pulses.",

author = "Wen Zhou and Xuan Li and Nathan Youngblood and Pernice, \{Wolfram H.P.\} and Wright, \{C. David\} and Harish Bhaskaran",

note = "Publisher Copyright: {\textcopyright} Optica Publishing Group 2022, {\textcopyright} 2022 The Author(s); CLEO: Science and Innovations, S and I 2022 ; Conference date: 15-05-2022 Through 20-05-2022",

year = "2022",

language = "英语",

journal = "Optics InfoBase Conference Papers",

issn = "2162-2701",

}

TY - JOUR

T1 - Electrical switching of Ge2Sb2Te5 memory cells based on silicon photonic waveguide microheaters

AU - Zhou, Wen

AU - Li, Xuan

AU - Youngblood, Nathan

AU - Pernice, Wolfram H.P.

AU - Wright, C. David

AU - Bhaskaran, Harish

PY - 2022

Y1 - 2022

N2 - We demonstrate binary and multilevel electrical programming of the phase change material Ge2Sb2Te5 (GST) memory cells based on ion-implanted silicon-on-insulator (SOI) waveguide microheaters. GST cells can be reversibly switched by using low-amplitude electric pulses.

AB - We demonstrate binary and multilevel electrical programming of the phase change material Ge2Sb2Te5 (GST) memory cells based on ion-implanted silicon-on-insulator (SOI) waveguide microheaters. GST cells can be reversibly switched by using low-amplitude electric pulses.

UR - https://www.scopus.com/pages/publications/85136816051

M3 - 会议文章

AN - SCOPUS:85136816051

SN - 2162-2701

JO - Optics InfoBase Conference Papers

JF - Optics InfoBase Conference Papers

M1 - SF2N.5

T2 - CLEO: Science and Innovations, S and I 2022

Y2 - 15 May 2022 through 20 May 2022

ER -

Electrical switching of Ge₂Sb₂Te₅ memory cells based on silicon photonic waveguide microheaters

Abstract

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