Skip to main navigation Skip to search Skip to main content

Electrical resistivity and application of Cu3N thin films

  • Y. Q. Ren
  • , M. Liu
  • , X. M. Yuan
  • , T. Liu
  • , N. Zhang
  • China University of Mining and Technology
  • Xuzhou Air Force College
  • Xuzhou Air Force CollegeXuzhou

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

The paper mainly reviewed the electrical resistivity and application of Cu3N thin films. The electrical resistivity increases from 2×10-5Ω·cm to 2×102Ω·cm. The application of Cu3N thin films as write-once optical recording materials and anode material for Li-ion rechargeable batteries was also presented.

Original languageEnglish
Title of host publicationComputer-Aided Design, Manufacturing, Modeling and Simulation II
Pages1140-1143
Number of pages4
DOIs
StatePublished - 2013
Externally publishedYes
Event2nd International Conference on Computer-Aided Design, Manufacturing, Modeling and Simulation, CDMMS 2012 - Chongqing, China
Duration: 21 Sep 201223 Sep 2012

Publication series

NameApplied Mechanics and Materials
Volume246-247
ISSN (Print)1660-9336
ISSN (Electronic)1662-7482

Conference

Conference2nd International Conference on Computer-Aided Design, Manufacturing, Modeling and Simulation, CDMMS 2012
Country/TerritoryChina
CityChongqing
Period21/09/1223/09/12

Keywords

  • CuN film
  • Electrical resistivity
  • Li-ion rechargeable batteries

Fingerprint

Dive into the research topics of 'Electrical resistivity and application of Cu3N thin films'. Together they form a unique fingerprint.

Cite this