Electrical properties of PMN-PZT film on silicon lens

Jun Ou-Yang; Benpeng Zhu; Xinxin Yan; Jinyan Zhao; Wei Ren; Xiaofei Yang

doi:10.1016/j.ceramint.2014.11.090

Electrical properties of PMN-PZT film on silicon lens

Jun Ou-Yang
, Benpeng Zhu
, Xinxin Yan
, Jinyan Zhao
, Wei Ren
, Xiaofei Yang

Faculty of Electronic and Information Engineering

Huazhong University of Science and Technology
Chinese Academy of Sciences

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

A polycrystalline PMN-PZT film with a composition close to the morphotropic phase boundary (MPB) and a thickness of approximately 2 μm was successfully prepared on a silicon lens using the sol-gel method. This film exhibited excellent dielectric, ferroelectric, and piezoelectric behavior. A dielectric constant (ε_r) of 1756 at 1 kHz, a remnant polarization (P_r) of 22 μC/cm², and an effective piezoelectric coefficient (d_33,f) of 150 pm/V were obtained, indicating that PMN-PZT film on silicon lens is a promising candidate for tightly focused ultra-high ultrasound transducer applications.

Original language	English
Pages (from-to)	4243-4247
Number of pages	5
Journal	Ceramics International
Volume	41
Issue number	3
DOIs	https://doi.org/10.1016/j.ceramint.2014.11.090
State	Published - 1 Apr 2015

Keywords

PMN-PZT film
Silicon lens
Ultrahigh frequency ultrasound

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10.1016/j.ceramint.2014.11.090

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@article{99e5608c5b8e4011b8b2efafa7dd9e4a,

title = "Electrical properties of PMN-PZT film on silicon lens",

abstract = "A polycrystalline PMN-PZT film with a composition close to the morphotropic phase boundary (MPB) and a thickness of approximately 2 μm was successfully prepared on a silicon lens using the sol-gel method. This film exhibited excellent dielectric, ferroelectric, and piezoelectric behavior. A dielectric constant (εr) of 1756 at 1 kHz, a remnant polarization (Pr) of 22 μC/cm2, and an effective piezoelectric coefficient (d33,f) of 150 pm/V were obtained, indicating that PMN-PZT film on silicon lens is a promising candidate for tightly focused ultra-high ultrasound transducer applications.",

keywords = "PMN-PZT film, Silicon lens, Ultrahigh frequency ultrasound",

author = "Jun Ou-Yang and Benpeng Zhu and Xinxin Yan and Jinyan Zhao and Wei Ren and Xiaofei Yang",

note = "Publisher Copyright: {\textcopyright} 2014 Elsevier Ltd and Techna Group S.r.l.",

year = "2015",

month = apr,

day = "1",

doi = "10.1016/j.ceramint.2014.11.090",

language = "英语",

volume = "41",

pages = "4243--4247",

journal = "Ceramics International",

issn = "0272-8842",

publisher = "Elsevier Ltd",

number = "3",

}

TY - JOUR

T1 - Electrical properties of PMN-PZT film on silicon lens

AU - Ou-Yang, Jun

AU - Zhu, Benpeng

AU - Yan, Xinxin

AU - Zhao, Jinyan

AU - Ren, Wei

AU - Yang, Xiaofei

PY - 2015/4/1

Y1 - 2015/4/1

N2 - A polycrystalline PMN-PZT film with a composition close to the morphotropic phase boundary (MPB) and a thickness of approximately 2 μm was successfully prepared on a silicon lens using the sol-gel method. This film exhibited excellent dielectric, ferroelectric, and piezoelectric behavior. A dielectric constant (εr) of 1756 at 1 kHz, a remnant polarization (Pr) of 22 μC/cm2, and an effective piezoelectric coefficient (d33,f) of 150 pm/V were obtained, indicating that PMN-PZT film on silicon lens is a promising candidate for tightly focused ultra-high ultrasound transducer applications.

AB - A polycrystalline PMN-PZT film with a composition close to the morphotropic phase boundary (MPB) and a thickness of approximately 2 μm was successfully prepared on a silicon lens using the sol-gel method. This film exhibited excellent dielectric, ferroelectric, and piezoelectric behavior. A dielectric constant (εr) of 1756 at 1 kHz, a remnant polarization (Pr) of 22 μC/cm2, and an effective piezoelectric coefficient (d33,f) of 150 pm/V were obtained, indicating that PMN-PZT film on silicon lens is a promising candidate for tightly focused ultra-high ultrasound transducer applications.

KW - PMN-PZT film

KW - Silicon lens

KW - Ultrahigh frequency ultrasound

UR - https://www.scopus.com/pages/publications/84921795818

U2 - 10.1016/j.ceramint.2014.11.090

DO - 10.1016/j.ceramint.2014.11.090

M3 - 文章

AN - SCOPUS:84921795818

SN - 0272-8842

VL - 41

SP - 4243

EP - 4247

JO - Ceramics International

JF - Ceramics International

IS - 3

ER -

Electrical properties of PMN-PZT film on silicon lens

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