Electrical Properties of H-Diamond Field Effect Transistor With ZrO2/HfO2 Stacked-Gate Deposited by Electron Beam

Fei Wang; Wei Wang; Gen Qiang Chen; Zhangcheng Liu; Wen Bo Hu; Hong Xing Wang

doi:10.1002/pssa.70471

Electrical Properties of H-Diamond Field Effect Transistor With ZrO₂/HfO₂ Stacked-Gate Deposited by Electron Beam

Fei Wang
, Wei Wang
, Gen Qiang Chen
, Zhangcheng Liu
, Wen Bo Hu
, Hong Xing Wang

Faculty of Electronic and Information Engineering

AVIC
Xi'an Jiaotong University
Jiangnan University

Research output: Contribution to journal › Article › peer-review

Abstract

Electrical properties of H-diamond field effect transistor with ZrO₂/HfO₂ stacked gate deposited by electron beam have been investigated in this letter. Due to the fixed positive charge in ZrO₂ contact layer, both devices exhibit normally-off operation. Compared with ZrO₂ monolayer gate sample, the ZrO₂/HfO₂ stacked-gate device showed an order of magnitude improvement in gate leakage current (~3.5 × 10⁻⁶ A/cm² at V_GS= −5 V), on/off ratio (10⁹), SS (138 mV/dec @ V_GS= −0.2 V) and a relatively higher I_Dmax of −50 mA/mm at V_GS= −6 V. Therefore, the ZrO₂/HfO₂ stacked-gate is a promising gate dielectric to improve the performance of H-diamond FETs.

Original language	English
Article number	e70471
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	223
Issue number	16
DOIs	https://doi.org/10.1002/pssa.70471
State	Published - 19 Aug 2026

Keywords

diamond
electron beam
H-diamond
normally-off
ZrO
ZrO/HfO

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10.1002/pssa.70471

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@article{324323a155da420ea84963710cd4f640,

title = "Electrical Properties of H-Diamond Field Effect Transistor With ZrO2/HfO2 Stacked-Gate Deposited by Electron Beam",

abstract = "Electrical properties of H-diamond field effect transistor with ZrO2/HfO2 stacked gate deposited by electron beam have been investigated in this letter. Due to the fixed positive charge in ZrO2 contact layer, both devices exhibit normally-off operation. Compared with ZrO2 monolayer gate sample, the ZrO2/HfO2 stacked-gate device showed an order of magnitude improvement in gate leakage current (\textasciitilde{}3.5 {\texttimes} 10−6 A/cm2 at VGS= −5 V), on/off ratio (109), SS (138 mV/dec @ VGS= −0.2 V) and a relatively higher IDmax of −50 mA/mm at VGS= −6 V. Therefore, the ZrO2/HfO2 stacked-gate is a promising gate dielectric to improve the performance of H-diamond FETs.",

keywords = "diamond, electron beam, H-diamond, normally-off, ZrO, ZrO/HfO",

author = "Fei Wang and Wei Wang and Chen, \{Gen Qiang\} and Zhangcheng Liu and Hu, \{Wen Bo\} and Wang, \{Hong Xing\}",

note = "Publisher Copyright: {\textcopyright} 2026 Wiley-VCH GmbH.",

year = "2026",

month = aug,

day = "19",

doi = "10.1002/pssa.70471",

language = "英语",

volume = "223",

journal = "Physica Status Solidi (A) Applications and Materials Science",

issn = "1862-6300",

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TY - JOUR

T1 - Electrical Properties of H-Diamond Field Effect Transistor With ZrO2/HfO2 Stacked-Gate Deposited by Electron Beam

AU - Wang, Fei

AU - Wang, Wei

AU - Chen, Gen Qiang

AU - Liu, Zhangcheng

AU - Hu, Wen Bo

AU - Wang, Hong Xing

PY - 2026/8/19

Y1 - 2026/8/19

N2 - Electrical properties of H-diamond field effect transistor with ZrO2/HfO2 stacked gate deposited by electron beam have been investigated in this letter. Due to the fixed positive charge in ZrO2 contact layer, both devices exhibit normally-off operation. Compared with ZrO2 monolayer gate sample, the ZrO2/HfO2 stacked-gate device showed an order of magnitude improvement in gate leakage current (~3.5 × 10−6 A/cm2 at VGS= −5 V), on/off ratio (109), SS (138 mV/dec @ VGS= −0.2 V) and a relatively higher IDmax of −50 mA/mm at VGS= −6 V. Therefore, the ZrO2/HfO2 stacked-gate is a promising gate dielectric to improve the performance of H-diamond FETs.

AB - Electrical properties of H-diamond field effect transistor with ZrO2/HfO2 stacked gate deposited by electron beam have been investigated in this letter. Due to the fixed positive charge in ZrO2 contact layer, both devices exhibit normally-off operation. Compared with ZrO2 monolayer gate sample, the ZrO2/HfO2 stacked-gate device showed an order of magnitude improvement in gate leakage current (~3.5 × 10−6 A/cm2 at VGS= −5 V), on/off ratio (109), SS (138 mV/dec @ VGS= −0.2 V) and a relatively higher IDmax of −50 mA/mm at VGS= −6 V. Therefore, the ZrO2/HfO2 stacked-gate is a promising gate dielectric to improve the performance of H-diamond FETs.

KW - diamond

KW - electron beam

KW - H-diamond

KW - normally-off

KW - ZrO

KW - ZrO/HfO

UR - https://www.scopus.com/pages/publications/105046596506

U2 - 10.1002/pssa.70471

DO - 10.1002/pssa.70471

M3 - 文章

AN - SCOPUS:105046596506

SN - 1862-6300

VL - 223

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

IS - 16

M1 - e70471

ER -

Electrical Properties of H-Diamond Field Effect Transistor With ZrO₂/HfO₂ Stacked-Gate Deposited by Electron Beam

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Keywords

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