Electrical properties of direct deposited piezoelectric thick film formed by gas deposition method annealing effect of the deposited films

Jun Akedo; Noriaki Minami; Kouji Fukuda; Masaaki Ichiki; Ryutaro Maeda

doi:10.1080/00150199908014545

Electrical properties of direct deposited piezoelectric thick film formed by gas deposition method annealing effect of the deposited films

Jun Akedo
, Noriaki Minami
, Kouji Fukuda
, Masaaki Ichiki
, Ryutaro Maeda

Research output: Contribution to journal › Conference article › peer-review

50 Scopus citations

Abstract

Ultrafine particles jetting with the velocities of several hundreds m/s are accumulated on the metal and ceramic substrate via impact adhesion. Recently, the application of this phenomenon as a thick film formation method has been investigated for micro electro mechanical systems (MEMS) and micro devices. The gas deposition method is one of the thick film formation method based on impact adhesion of ultrafine particle. In this paper, the optimum annealing condition for the deposited Pb(Zr,Ti)O₃ film with thickness over 10 μ m is reported. For the deposited films after annealing at 600°C for 1 hour, the remanent polarization of 20 μ C/cm² and the coercive filed of 44.7kV / cm was obtained.

Original language	English
Pages (from-to)	285-292
Number of pages	8
Journal	Ferroelectrics
Volume	231
Issue number	1 -4 pt 3
DOIs	https://doi.org/10.1080/00150199908014545
State	Published - 1999
Externally published	Yes
Event	Proceedings of the 1998 2nd Asian Meeting on Ferrroelectricity (AMF-2) - Singapore, Singapore Duration: 7 Dec 1998 → 11 Dec 1998

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title = "Electrical properties of direct deposited piezoelectric thick film formed by gas deposition method annealing effect of the deposited films",

abstract = "Ultrafine particles jetting with the velocities of several hundreds m/s are accumulated on the metal and ceramic substrate via impact adhesion. Recently, the application of this phenomenon as a thick film formation method has been investigated for micro electro mechanical systems (MEMS) and micro devices. The gas deposition method is one of the thick film formation method based on impact adhesion of ultrafine particle. In this paper, the optimum annealing condition for the deposited Pb(Zr,Ti)O3 film with thickness over 10 μ m is reported. For the deposited films after annealing at 600°C for 1 hour, the remanent polarization of 20 μ C/cm2 and the coercive filed of 44.7kV / cm was obtained.",

author = "Jun Akedo and Noriaki Minami and Kouji Fukuda and Masaaki Ichiki and Ryutaro Maeda",

year = "1999",

doi = "10.1080/00150199908014545",

language = "英语",

volume = "231",

pages = "285--292",

journal = "Ferroelectrics",

issn = "0015-0193",

publisher = "Taylor and Francis Ltd.",

number = "1 -4 pt 3",

note = "Proceedings of the 1998 2nd Asian Meeting on Ferrroelectricity (AMF-2) ; Conference date: 07-12-1998 Through 11-12-1998",

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TY - JOUR

T1 - Electrical properties of direct deposited piezoelectric thick film formed by gas deposition method annealing effect of the deposited films

AU - Akedo, Jun

AU - Minami, Noriaki

AU - Fukuda, Kouji

AU - Ichiki, Masaaki

AU - Maeda, Ryutaro

PY - 1999

Y1 - 1999

N2 - Ultrafine particles jetting with the velocities of several hundreds m/s are accumulated on the metal and ceramic substrate via impact adhesion. Recently, the application of this phenomenon as a thick film formation method has been investigated for micro electro mechanical systems (MEMS) and micro devices. The gas deposition method is one of the thick film formation method based on impact adhesion of ultrafine particle. In this paper, the optimum annealing condition for the deposited Pb(Zr,Ti)O3 film with thickness over 10 μ m is reported. For the deposited films after annealing at 600°C for 1 hour, the remanent polarization of 20 μ C/cm2 and the coercive filed of 44.7kV / cm was obtained.

AB - Ultrafine particles jetting with the velocities of several hundreds m/s are accumulated on the metal and ceramic substrate via impact adhesion. Recently, the application of this phenomenon as a thick film formation method has been investigated for micro electro mechanical systems (MEMS) and micro devices. The gas deposition method is one of the thick film formation method based on impact adhesion of ultrafine particle. In this paper, the optimum annealing condition for the deposited Pb(Zr,Ti)O3 film with thickness over 10 μ m is reported. For the deposited films after annealing at 600°C for 1 hour, the remanent polarization of 20 μ C/cm2 and the coercive filed of 44.7kV / cm was obtained.

UR - https://www.scopus.com/pages/publications/0033320007

U2 - 10.1080/00150199908014545

DO - 10.1080/00150199908014545

M3 - 会议文章

AN - SCOPUS:0033320007

SN - 0015-0193

VL - 231

SP - 285

EP - 292

JO - Ferroelectrics

JF - Ferroelectrics

IS - 1 -4 pt 3

T2 - Proceedings of the 1998 2nd Asian Meeting on Ferrroelectricity (AMF-2)

Y2 - 7 December 1998 through 11 December 1998

ER -

Electrical properties of direct deposited piezoelectric thick film formed by gas deposition method annealing effect of the deposited films

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