Electrical Characteristics of MISFETs with Al2O3 Atomic Layer Deposited as Hydrogen-Terminated Diamond Protective Layer

Pengfei Zhang; Weidong Chen; Shaopeng Zhang; Shufang Yan; Wen Ma; Hongxing Wang

Electrical Characteristics of MISFETs with Al₂O₃ Atomic Layer Deposited as Hydrogen-Terminated Diamond Protective Layer

Pengfei Zhang
, Weidong Chen
, Shaopeng Zhang
, Shufang Yan
, Wen Ma
, Hongxing Wang

Faculty of Electronic and Information Engineering

Inner Mongolia University of Technology
Xi'an Jiaotong University
Inner Mongolia Key Laboratory of Thin Film and Coatings

Research output: Contribution to journal › Article › peer-review

Abstract

The interface properties of Zr-Si-N/hydrogen-terminated diamond (H-diamond) metal insulator semiconductor field transistors (MISFETs) with and without Al₂O₃ protective layer were studied. The Al₂O₃ protection layer and Zr-Si-N insulation layer were deposited by atomic layer deposition (ALD) and radio frequency (RF) sputter methods, respectively. The transfer characteristics of the MISFETs show that the gate threshold voltage varies from -2.5 V to 3 V with and without Al₂O₃ layer, which indicates that the devices switch from normally off to normally on operation. The output and transfer properties reveal the preservation of hydrogen termination because of the Al₂O₃ layer.

Translated title of the contribution	原子层沉积Al₂O₃保护层氢终端金刚石MISFETs的电学特性
Original language	English
Pages (from-to)	1946-1949
Number of pages	4
Journal	Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering
Volume	50
Issue number	6
State	Published - Jun 2021

Keywords

Field-effect transistor
Protective layer
Zr-Si-N/AlO

Cite this

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title = "Electrical Characteristics of MISFETs with Al2O3 Atomic Layer Deposited as Hydrogen-Terminated Diamond Protective Layer",

abstract = "The interface properties of Zr-Si-N/hydrogen-terminated diamond (H-diamond) metal insulator semiconductor field transistors (MISFETs) with and without Al2O3 protective layer were studied. The Al2O3 protection layer and Zr-Si-N insulation layer were deposited by atomic layer deposition (ALD) and radio frequency (RF) sputter methods, respectively. The transfer characteristics of the MISFETs show that the gate threshold voltage varies from -2.5 V to 3 V with and without Al2O3 layer, which indicates that the devices switch from normally off to normally on operation. The output and transfer properties reveal the preservation of hydrogen termination because of the Al2O3 layer.",

keywords = "Field-effect transistor, Protective layer, Zr-Si-N/AlO",

author = "Pengfei Zhang and Weidong Chen and Shaopeng Zhang and Shufang Yan and Wen Ma and Hongxing Wang",

year = "2021",

month = jun,

language = "英语",

volume = "50",

pages = "1946--1949",

journal = "Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering",

issn = "1002-185X",

publisher = "Science Press ",

number = "6",

}

TY - JOUR

T1 - Electrical Characteristics of MISFETs with Al2O3 Atomic Layer Deposited as Hydrogen-Terminated Diamond Protective Layer

AU - Zhang, Pengfei

AU - Chen, Weidong

AU - Zhang, Shaopeng

AU - Yan, Shufang

AU - Ma, Wen

AU - Wang, Hongxing

PY - 2021/6

Y1 - 2021/6

N2 - The interface properties of Zr-Si-N/hydrogen-terminated diamond (H-diamond) metal insulator semiconductor field transistors (MISFETs) with and without Al2O3 protective layer were studied. The Al2O3 protection layer and Zr-Si-N insulation layer were deposited by atomic layer deposition (ALD) and radio frequency (RF) sputter methods, respectively. The transfer characteristics of the MISFETs show that the gate threshold voltage varies from -2.5 V to 3 V with and without Al2O3 layer, which indicates that the devices switch from normally off to normally on operation. The output and transfer properties reveal the preservation of hydrogen termination because of the Al2O3 layer.

AB - The interface properties of Zr-Si-N/hydrogen-terminated diamond (H-diamond) metal insulator semiconductor field transistors (MISFETs) with and without Al2O3 protective layer were studied. The Al2O3 protection layer and Zr-Si-N insulation layer were deposited by atomic layer deposition (ALD) and radio frequency (RF) sputter methods, respectively. The transfer characteristics of the MISFETs show that the gate threshold voltage varies from -2.5 V to 3 V with and without Al2O3 layer, which indicates that the devices switch from normally off to normally on operation. The output and transfer properties reveal the preservation of hydrogen termination because of the Al2O3 layer.

KW - Field-effect transistor

KW - Protective layer

KW - Zr-Si-N/AlO

UR - https://www.scopus.com/pages/publications/85111212094

M3 - 文章

AN - SCOPUS:85111212094

SN - 1002-185X

VL - 50

SP - 1946

EP - 1949

JO - Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering

JF - Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering

IS - 6

ER -

Electrical Characteristics of MISFETs with Al₂O₃ Atomic Layer Deposited as Hydrogen-Terminated Diamond Protective Layer

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Keywords

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