Electrical Characteristics of Diamond MOSFET with 2DHG on a Heteroepitaxial Diamond Substrate

Genqiang Chen; Wei Wang; Fang Lin; Minghui Zhang; Qiang Wei; Cui Yu; Hong Xing Wang

doi:10.3390/ma15072557

Electrical Characteristics of Diamond MOSFET with 2DHG on a Heteroepitaxial Diamond Substrate

Genqiang Chen
, Wei Wang
, Fang Lin
, Minghui Zhang
, Qiang Wei
, Cui Yu
, Hong Xing Wang

Faculty of Electronic and Information Engineering

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

In this work, hydrogen-terminated diamond (H-diamond) metal-oxide-semiconductor field-effect-transistors (MOSFETs) on a heteroepitaxial diamond substrate with an Al₂O₃ dielectric and a passivation layer were characterized. The full-width at half maximum value of the diamond (004) X-ray rocking curve was 205.9 arcsec. The maximum output current density and transconductance of the MOSFET were 172 mA/mm and 10.4 mS/mm, respectively. The effect of a low-temperature annealing process on electrical properties was also investigated. After the annealing process in N₂ atmosphere, the threshold voltage (V_th ) and flat-band voltage (V_FB) shifts to negative direction due to loss of negative charges. After annealing at 423 K for 3 min, the maximum value of hole field effective mobility (µ_eff ) increases by 27% at V_th − V_GS = 2 V. The results, which are not inferior to those based on homoepitaxial diamond, promote the application of heteroepitaxial diamond in the field of electronic devices.

Original language	English
Article number	2557
Journal	Materials
Volume	15
Issue number	7
DOIs	https://doi.org/10.3390/ma15072557
State	Published - 1 Apr 2022

Keywords

annealing
heteroepitaxial diamond
MOSFET

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10.3390/ma15072557

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@article{79caaec6427348158dbb23f8113940c4,

title = "Electrical Characteristics of Diamond MOSFET with 2DHG on a Heteroepitaxial Diamond Substrate",

abstract = "In this work, hydrogen-terminated diamond (H-diamond) metal-oxide-semiconductor field-effect-transistors (MOSFETs) on a heteroepitaxial diamond substrate with an Al2O3 dielectric and a passivation layer were characterized. The full-width at half maximum value of the diamond (004) X-ray rocking curve was 205.9 arcsec. The maximum output current density and transconductance of the MOSFET were 172 mA/mm and 10.4 mS/mm, respectively. The effect of a low-temperature annealing process on electrical properties was also investigated. After the annealing process in N2 atmosphere, the threshold voltage (Vth ) and flat-band voltage (VFB) shifts to negative direction due to loss of negative charges. After annealing at 423 K for 3 min, the maximum value of hole field effective mobility (µeff ) increases by 27\% at Vth − VGS = 2 V. The results, which are not inferior to those based on homoepitaxial diamond, promote the application of heteroepitaxial diamond in the field of electronic devices.",

keywords = "annealing, heteroepitaxial diamond, MOSFET",

author = "Genqiang Chen and Wei Wang and Fang Lin and Minghui Zhang and Qiang Wei and Cui Yu and Wang, \{Hong Xing\}",

note = "Publisher Copyright: {\textcopyright} 2022 by the authors. Licensee MDPI, Basel, Switzerland.",

year = "2022",

month = apr,

day = "1",

doi = "10.3390/ma15072557",

language = "英语",

volume = "15",

journal = "Materials",

issn = "1996-1944",

publisher = "Multidisciplinary Digital Publishing Institute (MDPI)",

number = "7",

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TY - JOUR

T1 - Electrical Characteristics of Diamond MOSFET with 2DHG on a Heteroepitaxial Diamond Substrate

AU - Chen, Genqiang

AU - Wang, Wei

AU - Lin, Fang

AU - Zhang, Minghui

AU - Wei, Qiang

AU - Yu, Cui

AU - Wang, Hong Xing

PY - 2022/4/1

Y1 - 2022/4/1

N2 - In this work, hydrogen-terminated diamond (H-diamond) metal-oxide-semiconductor field-effect-transistors (MOSFETs) on a heteroepitaxial diamond substrate with an Al2O3 dielectric and a passivation layer were characterized. The full-width at half maximum value of the diamond (004) X-ray rocking curve was 205.9 arcsec. The maximum output current density and transconductance of the MOSFET were 172 mA/mm and 10.4 mS/mm, respectively. The effect of a low-temperature annealing process on electrical properties was also investigated. After the annealing process in N2 atmosphere, the threshold voltage (Vth ) and flat-band voltage (VFB) shifts to negative direction due to loss of negative charges. After annealing at 423 K for 3 min, the maximum value of hole field effective mobility (µeff ) increases by 27% at Vth − VGS = 2 V. The results, which are not inferior to those based on homoepitaxial diamond, promote the application of heteroepitaxial diamond in the field of electronic devices.

AB - In this work, hydrogen-terminated diamond (H-diamond) metal-oxide-semiconductor field-effect-transistors (MOSFETs) on a heteroepitaxial diamond substrate with an Al2O3 dielectric and a passivation layer were characterized. The full-width at half maximum value of the diamond (004) X-ray rocking curve was 205.9 arcsec. The maximum output current density and transconductance of the MOSFET were 172 mA/mm and 10.4 mS/mm, respectively. The effect of a low-temperature annealing process on electrical properties was also investigated. After the annealing process in N2 atmosphere, the threshold voltage (Vth ) and flat-band voltage (VFB) shifts to negative direction due to loss of negative charges. After annealing at 423 K for 3 min, the maximum value of hole field effective mobility (µeff ) increases by 27% at Vth − VGS = 2 V. The results, which are not inferior to those based on homoepitaxial diamond, promote the application of heteroepitaxial diamond in the field of electronic devices.

KW - annealing

KW - heteroepitaxial diamond

KW - MOSFET

UR - https://www.scopus.com/pages/publications/85128308652

U2 - 10.3390/ma15072557

DO - 10.3390/ma15072557

M3 - 文章

AN - SCOPUS:85128308652

SN - 1996-1944

VL - 15

JO - Materials

JF - Materials

IS - 7

M1 - 2557

ER -

Electrical Characteristics of Diamond MOSFET with 2DHG on a Heteroepitaxial Diamond Substrate

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Keywords

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