Electric field modulation of magnetoresistance in multiferroic heterostructures for ultralow power electronics

Ming Liu; Shandong Li; Ogheneyunume Obi; Jing Lou; Scott Rand; Nian X. Sun

doi:10.1063/1.3597796

Electric field modulation of magnetoresistance in multiferroic heterostructures for ultralow power electronics

Ming Liu
, Shandong Li
, Ogheneyunume Obi
, Jing Lou
, Scott Rand
, Nian X. Sun

Research output: Contribution to journal › Article › peer-review

106 Scopus citations

Abstract

An energy-efficiency technique for electrically modulating magnetoresistance was demonstrated in multiferroic anisotropic magnetoresistance (AMR) and giant magnetoresistance (GMR) heterostructures. A giant electric field (E-field) induced magnetic anisotropy caused by a strong magnetoelectric coupling was utilized to control the orientation of magnetization and thus dynamically manipulate magnetoresistance in AMR and GMR devices. A multiband tunable AMR field sensor was designed and developed to dramatically enhance the measurement range by 15 times. In addition, two types of E-field determination of GMR in spin-valve structures are studied. The results indicate an energy efficiency approach to controlling magnetoresistance by E-field rather than magnetic field, which shows great potential for novel low power electronic and spintronic devices.

Original language	English
Article number	222509
Journal	Applied Physics Letters
Volume	98
Issue number	22
DOIs	https://doi.org/10.1063/1.3597796
State	Published - 30 May 2011
Externally published	Yes

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10.1063/1.3597796

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title = "Electric field modulation of magnetoresistance in multiferroic heterostructures for ultralow power electronics",

abstract = "An energy-efficiency technique for electrically modulating magnetoresistance was demonstrated in multiferroic anisotropic magnetoresistance (AMR) and giant magnetoresistance (GMR) heterostructures. A giant electric field (E-field) induced magnetic anisotropy caused by a strong magnetoelectric coupling was utilized to control the orientation of magnetization and thus dynamically manipulate magnetoresistance in AMR and GMR devices. A multiband tunable AMR field sensor was designed and developed to dramatically enhance the measurement range by 15 times. In addition, two types of E-field determination of GMR in spin-valve structures are studied. The results indicate an energy efficiency approach to controlling magnetoresistance by E-field rather than magnetic field, which shows great potential for novel low power electronic and spintronic devices.",

author = "Ming Liu and Shandong Li and Ogheneyunume Obi and Jing Lou and Scott Rand and Sun, \{Nian X.\}",

year = "2011",

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doi = "10.1063/1.3597796",

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journal = "Applied Physics Letters",

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T1 - Electric field modulation of magnetoresistance in multiferroic heterostructures for ultralow power electronics

AU - Liu, Ming

AU - Li, Shandong

AU - Obi, Ogheneyunume

AU - Lou, Jing

AU - Rand, Scott

AU - Sun, Nian X.

PY - 2011/5/30

Y1 - 2011/5/30

N2 - An energy-efficiency technique for electrically modulating magnetoresistance was demonstrated in multiferroic anisotropic magnetoresistance (AMR) and giant magnetoresistance (GMR) heterostructures. A giant electric field (E-field) induced magnetic anisotropy caused by a strong magnetoelectric coupling was utilized to control the orientation of magnetization and thus dynamically manipulate magnetoresistance in AMR and GMR devices. A multiband tunable AMR field sensor was designed and developed to dramatically enhance the measurement range by 15 times. In addition, two types of E-field determination of GMR in spin-valve structures are studied. The results indicate an energy efficiency approach to controlling magnetoresistance by E-field rather than magnetic field, which shows great potential for novel low power electronic and spintronic devices.

AB - An energy-efficiency technique for electrically modulating magnetoresistance was demonstrated in multiferroic anisotropic magnetoresistance (AMR) and giant magnetoresistance (GMR) heterostructures. A giant electric field (E-field) induced magnetic anisotropy caused by a strong magnetoelectric coupling was utilized to control the orientation of magnetization and thus dynamically manipulate magnetoresistance in AMR and GMR devices. A multiband tunable AMR field sensor was designed and developed to dramatically enhance the measurement range by 15 times. In addition, two types of E-field determination of GMR in spin-valve structures are studied. The results indicate an energy efficiency approach to controlling magnetoresistance by E-field rather than magnetic field, which shows great potential for novel low power electronic and spintronic devices.

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U2 - 10.1063/1.3597796

DO - 10.1063/1.3597796

M3 - 文章

AN - SCOPUS:79958819449

SN - 0003-6951

VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

M1 - 222509

ER -

Electric field modulation of magnetoresistance in multiferroic heterostructures for ultralow power electronics

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