Electric-field-modulated nonvolatile resistance switching in VO 2/PMN-PT(111) heterostructures

Bowen Zhi; Guanyin Gao; Haoran Xu; Feng Chen; Xuelian Tan; Pingfan Chen; Lingfei Wang; Wenbin Wu

doi:10.1021/am405767q

Electric-field-modulated nonvolatile resistance switching in VO ₂/PMN-PT(111) heterostructures

Bowen Zhi
, Guanyin Gao
, Haoran Xu
, Feng Chen
, Xuelian Tan
, Pingfan Chen
, Lingfei Wang
, Wenbin Wu

University of Science and Technology of China
Chinese Academy of Sciences

Research output: Contribution to journal › Article › peer-review

95 Scopus citations

Abstract

The electric-field-modulated resistance switching in VO₂ thin films grown on piezoelectric (111)-0.68Pb(Mg_1/3Nb_2/3) O₃-0.32PbTiO₃ (PMN-PT) substrates has been investigated. Large relative change in resistance (10.7%) was observed in VO ₂/PMN-PT(111) hererostructures at room temperature. For a substrate with a given polarization direction, stable resistive states of VO₂ films can be realized even when the applied electric fields are removed from the heterostructures. By sweeping electric fields across the heterostructure appropriately, multiple resistive states can be achieved. These stable resistive states result from the different stable remnant strain states of substrate, which is related to the rearrangements of ferroelectric domain structures in PMN-PT(111) substrate. The resistance switching tuned by electric field in our work may have potential applications for novel electronic devices.

Original language	English
Pages (from-to)	4603-4608
Number of pages	6
Journal	ACS Applied Materials and Interfaces
Volume	6
Issue number	7
DOIs	https://doi.org/10.1021/am405767q
State	Published - 9 Apr 2014
Externally published	Yes

Keywords

ferroelectric domains
heterostructures
nonvolatile
resistance switching
strain

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10.1021/am405767q

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@article{411e890f74a341a3a90adda41a527e8e,

title = "Electric-field-modulated nonvolatile resistance switching in VO 2/PMN-PT(111) heterostructures",

abstract = "The electric-field-modulated resistance switching in VO2 thin films grown on piezoelectric (111)-0.68Pb(Mg1/3Nb2/3) O3-0.32PbTiO3 (PMN-PT) substrates has been investigated. Large relative change in resistance (10.7\%) was observed in VO 2/PMN-PT(111) hererostructures at room temperature. For a substrate with a given polarization direction, stable resistive states of VO2 films can be realized even when the applied electric fields are removed from the heterostructures. By sweeping electric fields across the heterostructure appropriately, multiple resistive states can be achieved. These stable resistive states result from the different stable remnant strain states of substrate, which is related to the rearrangements of ferroelectric domain structures in PMN-PT(111) substrate. The resistance switching tuned by electric field in our work may have potential applications for novel electronic devices.",

keywords = "ferroelectric domains, heterostructures, nonvolatile, resistance switching, strain",

author = "Bowen Zhi and Guanyin Gao and Haoran Xu and Feng Chen and Xuelian Tan and Pingfan Chen and Lingfei Wang and Wenbin Wu",

year = "2014",

month = apr,

day = "9",

doi = "10.1021/am405767q",

language = "英语",

volume = "6",

pages = "4603--4608",

journal = "ACS Applied Materials and Interfaces",

issn = "1944-8244",

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}

TY - JOUR

T1 - Electric-field-modulated nonvolatile resistance switching in VO 2/PMN-PT(111) heterostructures

AU - Zhi, Bowen

AU - Gao, Guanyin

AU - Xu, Haoran

AU - Chen, Feng

AU - Tan, Xuelian

AU - Chen, Pingfan

AU - Wang, Lingfei

AU - Wu, Wenbin

PY - 2014/4/9

Y1 - 2014/4/9

N2 - The electric-field-modulated resistance switching in VO2 thin films grown on piezoelectric (111)-0.68Pb(Mg1/3Nb2/3) O3-0.32PbTiO3 (PMN-PT) substrates has been investigated. Large relative change in resistance (10.7%) was observed in VO 2/PMN-PT(111) hererostructures at room temperature. For a substrate with a given polarization direction, stable resistive states of VO2 films can be realized even when the applied electric fields are removed from the heterostructures. By sweeping electric fields across the heterostructure appropriately, multiple resistive states can be achieved. These stable resistive states result from the different stable remnant strain states of substrate, which is related to the rearrangements of ferroelectric domain structures in PMN-PT(111) substrate. The resistance switching tuned by electric field in our work may have potential applications for novel electronic devices.

AB - The electric-field-modulated resistance switching in VO2 thin films grown on piezoelectric (111)-0.68Pb(Mg1/3Nb2/3) O3-0.32PbTiO3 (PMN-PT) substrates has been investigated. Large relative change in resistance (10.7%) was observed in VO 2/PMN-PT(111) hererostructures at room temperature. For a substrate with a given polarization direction, stable resistive states of VO2 films can be realized even when the applied electric fields are removed from the heterostructures. By sweeping electric fields across the heterostructure appropriately, multiple resistive states can be achieved. These stable resistive states result from the different stable remnant strain states of substrate, which is related to the rearrangements of ferroelectric domain structures in PMN-PT(111) substrate. The resistance switching tuned by electric field in our work may have potential applications for novel electronic devices.

KW - ferroelectric domains

KW - heterostructures

KW - nonvolatile

KW - resistance switching

KW - strain

UR - https://www.scopus.com/pages/publications/84898472654

U2 - 10.1021/am405767q

DO - 10.1021/am405767q

M3 - 文章

AN - SCOPUS:84898472654

SN - 1944-8244

VL - 6

SP - 4603

EP - 4608

JO - ACS Applied Materials and Interfaces

JF - ACS Applied Materials and Interfaces

IS - 7

ER -

Electric-field-modulated nonvolatile resistance switching in VO ₂/PMN-PT(111) heterostructures

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Keywords

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