Electric field-modulated amplified spontaneous emission in organo-lead halide perovskite CH3NH3PbI3

Fang Yuan; Zhaoxin Wu; Hua Dong; Bin Xia; Jun Xi; Shuya Ning; Lin Ma; Xun Hou

doi:10.1063/1.4938754

Electric field-modulated amplified spontaneous emission in organo-lead halide perovskite CH₃NH₃PbI₃

Fang Yuan
, Zhaoxin Wu
, Hua Dong
, Bin Xia
, Jun Xi
, Shuya Ning
, Lin Ma
, Xun Hou

Faculty of Electronic and Information Engineering

Xi'an Jiaotong University

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

The electric field-modulation of the spontaneous emission (SE) and amplified spontaneous emission (ASE) in organo-lead halide perovskite CH₃NH₃PbI₃ (aliased as MAPbI₃) layer has been investigated. With the increase of the external applied electric field, the electric field-induced quenching of the SE and ASE intensity was observed, accompanying with a blue-shift of the ASE emission peaks, which can be attributed to field-induced ionization of photogenerated excitons in the MAPbI₃ layer. Based on the analysis of quenching factor and the dielectric constant, we estimated an exciton binding energy ∼36 meV at room temperature, which will provide useful insights into the optical-electrical characteristics of MAPbI₃ and pave the way for the future optoelectronic applications.

Original language	English
Article number	261106
Journal	Applied Physics Letters
Volume	107
Issue number	26
DOIs	https://doi.org/10.1063/1.4938754
State	Published - 28 Dec 2015

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title = "Electric field-modulated amplified spontaneous emission in organo-lead halide perovskite CH3NH3PbI3",

abstract = "The electric field-modulation of the spontaneous emission (SE) and amplified spontaneous emission (ASE) in organo-lead halide perovskite CH3NH3PbI3 (aliased as MAPbI3) layer has been investigated. With the increase of the external applied electric field, the electric field-induced quenching of the SE and ASE intensity was observed, accompanying with a blue-shift of the ASE emission peaks, which can be attributed to field-induced ionization of photogenerated excitons in the MAPbI3 layer. Based on the analysis of quenching factor and the dielectric constant, we estimated an exciton binding energy ∼36 meV at room temperature, which will provide useful insights into the optical-electrical characteristics of MAPbI3 and pave the way for the future optoelectronic applications.",

author = "Fang Yuan and Zhaoxin Wu and Hua Dong and Bin Xia and Jun Xi and Shuya Ning and Lin Ma and Xun Hou",

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doi = "10.1063/1.4938754",

language = "英语",

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TY - JOUR

T1 - Electric field-modulated amplified spontaneous emission in organo-lead halide perovskite CH3NH3PbI3

AU - Yuan, Fang

AU - Wu, Zhaoxin

AU - Dong, Hua

AU - Xia, Bin

AU - Xi, Jun

AU - Ning, Shuya

AU - Ma, Lin

AU - Hou, Xun

PY - 2015/12/28

Y1 - 2015/12/28

N2 - The electric field-modulation of the spontaneous emission (SE) and amplified spontaneous emission (ASE) in organo-lead halide perovskite CH3NH3PbI3 (aliased as MAPbI3) layer has been investigated. With the increase of the external applied electric field, the electric field-induced quenching of the SE and ASE intensity was observed, accompanying with a blue-shift of the ASE emission peaks, which can be attributed to field-induced ionization of photogenerated excitons in the MAPbI3 layer. Based on the analysis of quenching factor and the dielectric constant, we estimated an exciton binding energy ∼36 meV at room temperature, which will provide useful insights into the optical-electrical characteristics of MAPbI3 and pave the way for the future optoelectronic applications.

AB - The electric field-modulation of the spontaneous emission (SE) and amplified spontaneous emission (ASE) in organo-lead halide perovskite CH3NH3PbI3 (aliased as MAPbI3) layer has been investigated. With the increase of the external applied electric field, the electric field-induced quenching of the SE and ASE intensity was observed, accompanying with a blue-shift of the ASE emission peaks, which can be attributed to field-induced ionization of photogenerated excitons in the MAPbI3 layer. Based on the analysis of quenching factor and the dielectric constant, we estimated an exciton binding energy ∼36 meV at room temperature, which will provide useful insights into the optical-electrical characteristics of MAPbI3 and pave the way for the future optoelectronic applications.

UR - https://www.scopus.com/pages/publications/84954069498

U2 - 10.1063/1.4938754

DO - 10.1063/1.4938754

M3 - 文章

AN - SCOPUS:84954069498

SN - 0003-6951

VL - 107

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

M1 - 261106

ER -

Electric field-modulated amplified spontaneous emission in organo-lead halide perovskite CH₃NH₃PbI₃

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