Effects of substrate temperature on ZnO-TFT based on Bi1.5Zn1.0Nb1.5O7 insulating layer

Wei Ye; Wei Ren; Peng Shi

doi:10.16818/j.issn1001-5868.2016.03.007

Effects of substrate temperature on ZnO-TFT based on Bi_1.5Zn_1.0Nb_1.5O₇ insulating layer

Wei Ye
, Wei Ren
, Peng Shi

Faculty of Electronic and Information Engineering

Xi'an Jiaotong University

Research output: Contribution to journal › Article › peer-review

Abstract

ZnO and BZN thin films were deposited by RF magnetron sputtering under different substrate temperature from RT to 600℃. It can be seen that BZN thin films are amorphous structure, and ZnO thin films has the c-axis preferred orientation. At 500℃, the leakage current density of BZN thin film is approximately three order magnitude lower than that of BZN thin film at RT. The sub-threshold awing (470 mV/dec.) of ZnO-TFT with BZN thin films as gate insulator and ZnO thin films as active layer is approximately three times lower than that of device (1271 mV/dec.) at RT, and the surface state density (3.21×10¹² cm^-2) of ZnO-TFT is approximately five times lower than that of device (1.48×10¹³ cm^-2) at RT.

Original language	English
Pages (from-to)	331-337
Number of pages	7
Journal	Bandaoti Guangdian/Semiconductor Optoelectronics
Volume	37
Issue number	3
DOIs	https://doi.org/10.16818/j.issn1001-5868.2016.03.007
State	Published - 1 Jun 2016

Keywords

Pyrochlore BZN films
RF magnetron sputtering
Sub-threshold swing
Surface state density
ZnO-TFT

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title = "Effects of substrate temperature on ZnO-TFT based on Bi1.5Zn1.0Nb1.5O7 insulating layer",

abstract = "ZnO and BZN thin films were deposited by RF magnetron sputtering under different substrate temperature from RT to 600℃. It can be seen that BZN thin films are amorphous structure, and ZnO thin films has the c-axis preferred orientation. At 500℃, the leakage current density of BZN thin film is approximately three order magnitude lower than that of BZN thin film at RT. The sub-threshold awing (470 mV/dec.) of ZnO-TFT with BZN thin films as gate insulator and ZnO thin films as active layer is approximately three times lower than that of device (1271 mV/dec.) at RT, and the surface state density (3.21×1012 cm-2) of ZnO-TFT is approximately five times lower than that of device (1.48×1013 cm-2) at RT.",

keywords = "Pyrochlore BZN films, RF magnetron sputtering, Sub-threshold swing, Surface state density, ZnO-TFT",

author = "Wei Ye and Wei Ren and Peng Shi",

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doi = "10.16818/j.issn1001-5868.2016.03.007",

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T1 - Effects of substrate temperature on ZnO-TFT based on Bi1.5Zn1.0Nb1.5O7 insulating layer

AU - Ye, Wei

AU - Ren, Wei

AU - Shi, Peng

PY - 2016/6/1

Y1 - 2016/6/1

N2 - ZnO and BZN thin films were deposited by RF magnetron sputtering under different substrate temperature from RT to 600℃. It can be seen that BZN thin films are amorphous structure, and ZnO thin films has the c-axis preferred orientation. At 500℃, the leakage current density of BZN thin film is approximately three order magnitude lower than that of BZN thin film at RT. The sub-threshold awing (470 mV/dec.) of ZnO-TFT with BZN thin films as gate insulator and ZnO thin films as active layer is approximately three times lower than that of device (1271 mV/dec.) at RT, and the surface state density (3.21×1012 cm-2) of ZnO-TFT is approximately five times lower than that of device (1.48×1013 cm-2) at RT.

AB - ZnO and BZN thin films were deposited by RF magnetron sputtering under different substrate temperature from RT to 600℃. It can be seen that BZN thin films are amorphous structure, and ZnO thin films has the c-axis preferred orientation. At 500℃, the leakage current density of BZN thin film is approximately three order magnitude lower than that of BZN thin film at RT. The sub-threshold awing (470 mV/dec.) of ZnO-TFT with BZN thin films as gate insulator and ZnO thin films as active layer is approximately three times lower than that of device (1271 mV/dec.) at RT, and the surface state density (3.21×1012 cm-2) of ZnO-TFT is approximately five times lower than that of device (1.48×1013 cm-2) at RT.

KW - Pyrochlore BZN films

KW - RF magnetron sputtering

KW - Sub-threshold swing

KW - Surface state density

KW - ZnO-TFT

UR - https://www.scopus.com/pages/publications/84976260962

U2 - 10.16818/j.issn1001-5868.2016.03.007

DO - 10.16818/j.issn1001-5868.2016.03.007

M3 - 文章

AN - SCOPUS:84976260962

SN - 1001-5868

VL - 37

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JO - Bandaoti Guangdian/Semiconductor Optoelectronics

JF - Bandaoti Guangdian/Semiconductor Optoelectronics

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ER -

Effects of substrate temperature on ZnO-TFT based on Bi_1.5Zn_1.0Nb_1.5O₇ insulating layer

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Keywords

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