Effects of LiF doping on the dielectric and piezoelectric properties of 0.36BiSeO₃-0.64PbTiO₃ ceramics

Perovskite structure 0.36BiScO₃-0.64PbTiO₃ ceramics were prepared with different concentration of LiF dopant, through conventional solid-state synthesis method. SEM analysis showed that grain size increased with increasing amount of doping. Similar piezoelectric properties were observed for 0.2% LiF samples and undoped samples sintered at 1 050°C and 1100°C, respectively. The value of planar coupling factor k_p was also found to increase from 0.56 for undoped samples to 0.61 for 0.2% LiF doped samples, and doping had little effect on d₃₃. The maximum dielectric constant increased whereas loss at room temperature and diffusion phase transition was depressed for the doped samples.