Effects of LaNiO3 buffer layers on preferential orientation growth and properties of PbTiO3 thin films

Xian Yang; Xiaoqing Wu; Wei Ren; Peng Shi; Xin Yan; Hongsheng Lei; Xi Yao

doi:10.1016/j.ceramint.2007.09.077

Effects of LaNiO₃ buffer layers on preferential orientation growth and properties of PbTiO₃ thin films

Xian Yang
, Xiaoqing Wu
, Wei Ren
, Peng Shi
, Xin Yan
, Hongsheng Lei
, Xi Yao

Key Lab of the Ministry of Education for Process Control and Efficiency Egineering

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

(1 0 0)- and (1 0 1)-oriented PbTiO₃ (PT) thin films on conductive LaNiO₃ (LNO)-coated Si(1 1 1) substrates were prepared by a metal-organic decomposition method. It is found that the crystallization states of LNO thin films used as buffer layers have significantly effects on preferential orientation of PT thin films. PT thin films with (1 0 0) orientation could be obtained not only on the crystalline LNO (1 0 0) film, but also on the amorphous LNO thin film. The highly (1 0 0)-oriented PT films show high dielectric constant of 189.4 on LNO (1 0 0) films and 183.1 on amorphous LNO films. The PT capacitors fabricated on the LNO buffer layers display good P-E hysteresis loops. The remnant polarization (P_r) and coercive field (E_c) of PT films on amorphous, (1 0 0)- and (1 1 0)-oriented LNO films are 9.35 μC/cm² and 162.8 kV/cm, 10.03 μC/cm² and 163.3 kV/cm, 11.23 μC/cm² and 166.2 kV/cm, respectively.

Original language	English
Pages (from-to)	1035-1038
Number of pages	4
Journal	Ceramics International
Volume	34
Issue number	4
DOIs	https://doi.org/10.1016/j.ceramint.2007.09.077
State	Published - May 2008
Externally published	Yes

Keywords

C. Electric properties
LaNiO and PbTiO films
MOD process
Oriented growth

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10.1016/j.ceramint.2007.09.077

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@article{1981a9c2cf414d558c7d11cf625ba565,

title = "Effects of LaNiO3 buffer layers on preferential orientation growth and properties of PbTiO3 thin films",

abstract = "(1 0 0)- and (1 0 1)-oriented PbTiO3 (PT) thin films on conductive LaNiO3 (LNO)-coated Si(1 1 1) substrates were prepared by a metal-organic decomposition method. It is found that the crystallization states of LNO thin films used as buffer layers have significantly effects on preferential orientation of PT thin films. PT thin films with (1 0 0) orientation could be obtained not only on the crystalline LNO (1 0 0) film, but also on the amorphous LNO thin film. The highly (1 0 0)-oriented PT films show high dielectric constant of 189.4 on LNO (1 0 0) films and 183.1 on amorphous LNO films. The PT capacitors fabricated on the LNO buffer layers display good P-E hysteresis loops. The remnant polarization (Pr) and coercive field (Ec) of PT films on amorphous, (1 0 0)- and (1 1 0)-oriented LNO films are 9.35 μC/cm2 and 162.8 kV/cm, 10.03 μC/cm2 and 163.3 kV/cm, 11.23 μC/cm2 and 166.2 kV/cm, respectively.",

keywords = "C. Electric properties, LaNiO and PbTiO films, MOD process, Oriented growth",

author = "Xian Yang and Xiaoqing Wu and Wei Ren and Peng Shi and Xin Yan and Hongsheng Lei and Xi Yao",

year = "2008",

month = may,

doi = "10.1016/j.ceramint.2007.09.077",

language = "英语",

volume = "34",

pages = "1035--1038",

journal = "Ceramics International",

issn = "0272-8842",

publisher = "Elsevier Ltd",

number = "4",

}

TY - JOUR

T1 - Effects of LaNiO3 buffer layers on preferential orientation growth and properties of PbTiO3 thin films

AU - Yang, Xian

AU - Wu, Xiaoqing

AU - Ren, Wei

AU - Shi, Peng

AU - Yan, Xin

AU - Lei, Hongsheng

AU - Yao, Xi

PY - 2008/5

Y1 - 2008/5

N2 - (1 0 0)- and (1 0 1)-oriented PbTiO3 (PT) thin films on conductive LaNiO3 (LNO)-coated Si(1 1 1) substrates were prepared by a metal-organic decomposition method. It is found that the crystallization states of LNO thin films used as buffer layers have significantly effects on preferential orientation of PT thin films. PT thin films with (1 0 0) orientation could be obtained not only on the crystalline LNO (1 0 0) film, but also on the amorphous LNO thin film. The highly (1 0 0)-oriented PT films show high dielectric constant of 189.4 on LNO (1 0 0) films and 183.1 on amorphous LNO films. The PT capacitors fabricated on the LNO buffer layers display good P-E hysteresis loops. The remnant polarization (Pr) and coercive field (Ec) of PT films on amorphous, (1 0 0)- and (1 1 0)-oriented LNO films are 9.35 μC/cm2 and 162.8 kV/cm, 10.03 μC/cm2 and 163.3 kV/cm, 11.23 μC/cm2 and 166.2 kV/cm, respectively.

AB - (1 0 0)- and (1 0 1)-oriented PbTiO3 (PT) thin films on conductive LaNiO3 (LNO)-coated Si(1 1 1) substrates were prepared by a metal-organic decomposition method. It is found that the crystallization states of LNO thin films used as buffer layers have significantly effects on preferential orientation of PT thin films. PT thin films with (1 0 0) orientation could be obtained not only on the crystalline LNO (1 0 0) film, but also on the amorphous LNO thin film. The highly (1 0 0)-oriented PT films show high dielectric constant of 189.4 on LNO (1 0 0) films and 183.1 on amorphous LNO films. The PT capacitors fabricated on the LNO buffer layers display good P-E hysteresis loops. The remnant polarization (Pr) and coercive field (Ec) of PT films on amorphous, (1 0 0)- and (1 1 0)-oriented LNO films are 9.35 μC/cm2 and 162.8 kV/cm, 10.03 μC/cm2 and 163.3 kV/cm, 11.23 μC/cm2 and 166.2 kV/cm, respectively.

KW - C. Electric properties

KW - LaNiO and PbTiO films

KW - MOD process

KW - Oriented growth

UR - https://www.scopus.com/pages/publications/42649094112

U2 - 10.1016/j.ceramint.2007.09.077

DO - 10.1016/j.ceramint.2007.09.077

M3 - 文章

AN - SCOPUS:42649094112

SN - 0272-8842

VL - 34

SP - 1035

EP - 1038

JO - Ceramics International

JF - Ceramics International

IS - 4

ER -

Effects of LaNiO₃ buffer layers on preferential orientation growth and properties of PbTiO₃ thin films

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