Effects of Heat-Treatment Temperature on the Properties of (1-x)(Na0.5Bi0.5)TiO3-xBiAlO3 Lead-Free Piezoelectric Thin Films

Yunqiang Yao; Xiaoqing Wu; Peng Shi; Zuo Guang Ye; H. E. Kim

doi:10.1111/jace.14116

Effects of Heat-Treatment Temperature on the Properties of (1-x)(Na_0.5Bi_0.5)TiO₃-xBiAlO₃ Lead-Free Piezoelectric Thin Films

Yunqiang Yao
, Xiaoqing Wu
, Peng Shi
, Zuo Guang Ye
, H. E. Kim

Faculty of Electronic and Information Engineering

Xi'an Jiaotong University
Simon Fraser University

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Lead-free sodium bismuth titanate-aluminate bismuth [0.97(Na_0.5Bi_0.5)TiO₃-0.03BiAlO₃] solid-solution films deposited on (100) Pt/TiO₂/SiO₂/Si substrates by a sol-gel process were pyrolyzed and annealed at different temperatures. The film annealed at 725°C with a pyrolysis temperature of 410°C exhibited the optimal electrical properties and excellent piezoelectric properties, with a remanent polarization 2P_r of 38 μC/cm² and a leakage current density of 10^-7-10^-6 A/cm² (E < 200 kV/cm). The values of the dielectric constant and dissipation factor at 100 kHz were 422 and 0.039, respectively. The piezoelectric coefficient of the film after poling at 168 kV/cm was found to be 57 pm/V, making the BNT-BA films a viable lead-free alternative to the lead-based materials in such as biosensors and ultrasonic transducers.

Original language	English
Pages (from-to)	1340-1344
Number of pages	5
Journal	Journal of the American Ceramic Society
Volume	99
Issue number	4
DOIs	https://doi.org/10.1111/jace.14116
State	Published - 1 Apr 2016

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title = "Effects of Heat-Treatment Temperature on the Properties of (1-x)(Na0.5Bi0.5)TiO3-xBiAlO3 Lead-Free Piezoelectric Thin Films",

abstract = "Lead-free sodium bismuth titanate-aluminate bismuth [0.97(Na0.5Bi0.5)TiO3-0.03BiAlO3] solid-solution films deposited on (100) Pt/TiO2/SiO2/Si substrates by a sol-gel process were pyrolyzed and annealed at different temperatures. The film annealed at 725°C with a pyrolysis temperature of 410°C exhibited the optimal electrical properties and excellent piezoelectric properties, with a remanent polarization 2Pr of 38 μC/cm2 and a leakage current density of 10-7-10-6 A/cm2 (E < 200 kV/cm). The values of the dielectric constant and dissipation factor at 100 kHz were 422 and 0.039, respectively. The piezoelectric coefficient of the film after poling at 168 kV/cm was found to be 57 pm/V, making the BNT-BA films a viable lead-free alternative to the lead-based materials in such as biosensors and ultrasonic transducers.",

author = "Yunqiang Yao and Xiaoqing Wu and Peng Shi and Ye, \{Zuo Guang\} and Kim, \{H. E.\}",

note = "Publisher Copyright: {\textcopyright} 2016 The American Ceramic Society.",

year = "2016",

month = apr,

day = "1",

doi = "10.1111/jace.14116",

language = "英语",

volume = "99",

pages = "1340--1344",

journal = "Journal of the American Ceramic Society",

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TY - JOUR

T1 - Effects of Heat-Treatment Temperature on the Properties of (1-x)(Na0.5Bi0.5)TiO3-xBiAlO3 Lead-Free Piezoelectric Thin Films

AU - Yao, Yunqiang

AU - Wu, Xiaoqing

AU - Shi, Peng

AU - Ye, Zuo Guang

AU - Kim, H. E.

PY - 2016/4/1

Y1 - 2016/4/1

N2 - Lead-free sodium bismuth titanate-aluminate bismuth [0.97(Na0.5Bi0.5)TiO3-0.03BiAlO3] solid-solution films deposited on (100) Pt/TiO2/SiO2/Si substrates by a sol-gel process were pyrolyzed and annealed at different temperatures. The film annealed at 725°C with a pyrolysis temperature of 410°C exhibited the optimal electrical properties and excellent piezoelectric properties, with a remanent polarization 2Pr of 38 μC/cm2 and a leakage current density of 10-7-10-6 A/cm2 (E < 200 kV/cm). The values of the dielectric constant and dissipation factor at 100 kHz were 422 and 0.039, respectively. The piezoelectric coefficient of the film after poling at 168 kV/cm was found to be 57 pm/V, making the BNT-BA films a viable lead-free alternative to the lead-based materials in such as biosensors and ultrasonic transducers.

AB - Lead-free sodium bismuth titanate-aluminate bismuth [0.97(Na0.5Bi0.5)TiO3-0.03BiAlO3] solid-solution films deposited on (100) Pt/TiO2/SiO2/Si substrates by a sol-gel process were pyrolyzed and annealed at different temperatures. The film annealed at 725°C with a pyrolysis temperature of 410°C exhibited the optimal electrical properties and excellent piezoelectric properties, with a remanent polarization 2Pr of 38 μC/cm2 and a leakage current density of 10-7-10-6 A/cm2 (E < 200 kV/cm). The values of the dielectric constant and dissipation factor at 100 kHz were 422 and 0.039, respectively. The piezoelectric coefficient of the film after poling at 168 kV/cm was found to be 57 pm/V, making the BNT-BA films a viable lead-free alternative to the lead-based materials in such as biosensors and ultrasonic transducers.

UR - https://www.scopus.com/pages/publications/84957837821

U2 - 10.1111/jace.14116

DO - 10.1111/jace.14116

M3 - 文章

AN - SCOPUS:84957837821

SN - 0002-7820

VL - 99

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EP - 1344

JO - Journal of the American Ceramic Society

JF - Journal of the American Ceramic Society

IS - 4

ER -

Effects of Heat-Treatment Temperature on the Properties of (1-x)(Na_0.5Bi_0.5)TiO₃-xBiAlO₃ Lead-Free Piezoelectric Thin Films

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