Effects of annealing ambient on electrical properties of LaBaCo 2O5+δ thin films

Ming Liu; Chunrui Ma; Eric Enriquez; Xing Xu; Shanyong Bao; Chonglin Chen

doi:10.4028/www.scientific.net/JNanoR.27.25

Effects of annealing ambient on electrical properties of LaBaCo ²O^5+δ thin films

Ming Liu
, Chunrui Ma
, Eric Enriquez
, Xing Xu
, Shanyong Bao
, Chonglin Chen

Faculty of Electronic and Information Engineering

University of Texas at San Antonio

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Highly epitaxial LaBaCo²O^5+δ thin films are successfully fabricated and annealed in different ambient conditions. The LaBaCo²O^5+δ thin films under O² and N² annealing atmosphere are c-axis oriented with the interface relationship of [100]LBCO//[100]LAO and (001)LBCO//(001)LAO. Annealing the film in N² ambient significantly increases the resistivity and magnetoresistance comparing to the films annealed in O² ambient. The magnetoresistance after annealing in N² is almost more than twice of the magnetoresistance after annealing in O². The result revealed that the electrical properties of the film are highly influenced by annealing atmosphere, indicating that the physical properties can be controlled by adjusting the post annealing atmosphere.

Original language	English
Pages (from-to)	25-30
Number of pages	6
Journal	Journal of Nano Research
Volume	27
DOIs	https://doi.org/10.4028/www.scientific.net/JNanoR.27.25
State	Published - 9 Apr 2014

Keywords

Annealing
Electronic Properties
Magnetoresistance
Thin films

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Cite this

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title = "Effects of annealing ambient on electrical properties of LaBaCo 2O5+δ thin films",

abstract = "Highly epitaxial LaBaCo2O5+δ thin films are successfully fabricated and annealed in different ambient conditions. The LaBaCo2O5+δ thin films under O2 and N2 annealing atmosphere are c-axis oriented with the interface relationship of [100]LBCO//[100]LAO and (001)LBCO//(001)LAO. Annealing the film in N2 ambient significantly increases the resistivity and magnetoresistance comparing to the films annealed in O2 ambient. The magnetoresistance after annealing in N2 is almost more than twice of the magnetoresistance after annealing in O2. The result revealed that the electrical properties of the film are highly influenced by annealing atmosphere, indicating that the physical properties can be controlled by adjusting the post annealing atmosphere.",

keywords = "Annealing, Electronic Properties, Magnetoresistance, Thin films",

author = "Ming Liu and Chunrui Ma and Eric Enriquez and Xing Xu and Shanyong Bao and Chonglin Chen",

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T1 - Effects of annealing ambient on electrical properties of LaBaCo 2O5+δ thin films

AU - Liu, Ming

AU - Ma, Chunrui

AU - Enriquez, Eric

AU - Xu, Xing

AU - Bao, Shanyong

AU - Chen, Chonglin

PY - 2014/4/9

Y1 - 2014/4/9

N2 - Highly epitaxial LaBaCo2O5+δ thin films are successfully fabricated and annealed in different ambient conditions. The LaBaCo2O5+δ thin films under O2 and N2 annealing atmosphere are c-axis oriented with the interface relationship of [100]LBCO//[100]LAO and (001)LBCO//(001)LAO. Annealing the film in N2 ambient significantly increases the resistivity and magnetoresistance comparing to the films annealed in O2 ambient. The magnetoresistance after annealing in N2 is almost more than twice of the magnetoresistance after annealing in O2. The result revealed that the electrical properties of the film are highly influenced by annealing atmosphere, indicating that the physical properties can be controlled by adjusting the post annealing atmosphere.

AB - Highly epitaxial LaBaCo2O5+δ thin films are successfully fabricated and annealed in different ambient conditions. The LaBaCo2O5+δ thin films under O2 and N2 annealing atmosphere are c-axis oriented with the interface relationship of [100]LBCO//[100]LAO and (001)LBCO//(001)LAO. Annealing the film in N2 ambient significantly increases the resistivity and magnetoresistance comparing to the films annealed in O2 ambient. The magnetoresistance after annealing in N2 is almost more than twice of the magnetoresistance after annealing in O2. The result revealed that the electrical properties of the film are highly influenced by annealing atmosphere, indicating that the physical properties can be controlled by adjusting the post annealing atmosphere.

KW - Annealing

KW - Electronic Properties

KW - Magnetoresistance

KW - Thin films

UR - https://www.scopus.com/pages/publications/84898433996

U2 - 10.4028/www.scientific.net/JNanoR.27.25

DO - 10.4028/www.scientific.net/JNanoR.27.25

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JO - Journal of Nano Research

JF - Journal of Nano Research

ER -

Effects of annealing ambient on electrical properties of LaBaCo ²O^5+δ thin films

Abstract

Keywords

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