Effective driving voltage on polarization fatigue in (Pb,La)(Zr,Ti)O₃ antiferroelectric thin films

Polarization fatigue in (Pb_0.97La_0.02)(Zr_0.95Ti_0.05)O₃ (PLZT) antiferroelectric thin films deposited onto silicon wafers is studied by investigating the effect of the peak/average/root-mean-square cycling voltage through varying the waveform of the electrical excitation. Interestingly, it is found that the fatigue behavior of the film is determined by the root-mean-square voltage of the external driving excitation rather than by the peak or average voltages. Our results can be well explained in the framework of the local phase decomposition model and indicate that the rootmean-square voltage should be considered as the effective driving voltage determining the polarization fatigue in PLZT antiferroelectric films.