Effect of visible-light illumination on resistive switching characteristics in Ag/Ce2W3O12/FTO devices

Bai Sun; Xiaoping Li; Dandan Liang; Peng Chen

doi:10.1016/j.cplett.2015.11.022

Effect of visible-light illumination on resistive switching characteristics in Ag/Ce₂W₃O₁₂/FTO devices

Bai Sun
, Xiaoping Li
, Dandan Liang
, Peng Chen

Southwest University

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

The resistive switching device is a fascinating candidate for next generation nonvolatile memories. In this Letter, we report a simple hydrothermal way to prepare Ce₂W₃O₁₂ powder. Furthermore, we fabricated a resistive switching memory device with Ag/Ce₂W₃O₁₂/fluorine-doped tin oxide (FTO) structure. Moreover, we observed the effect of visible-light illumination on resistive switching memory behaviour in Ag/Ce₂W₃O₁₂/FTO devices. This Letter is useful for exploring the new potential materials for resistive switching memory device, and provides the visible-light as a new control method for resistive switching random access memory (RRAM).

Original language	English
Pages (from-to)	66-70
Number of pages	5
Journal	Chemical Physics Letters
Volume	643
DOIs	https://doi.org/10.1016/j.cplett.2015.11.022
State	Published - 1 Jan 2016
Externally published	Yes

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10.1016/j.cplett.2015.11.022

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title = "Effect of visible-light illumination on resistive switching characteristics in Ag/Ce2W3O12/FTO devices",

abstract = "The resistive switching device is a fascinating candidate for next generation nonvolatile memories. In this Letter, we report a simple hydrothermal way to prepare Ce2W3O12 powder. Furthermore, we fabricated a resistive switching memory device with Ag/Ce2W3O12/fluorine-doped tin oxide (FTO) structure. Moreover, we observed the effect of visible-light illumination on resistive switching memory behaviour in Ag/Ce2W3O12/FTO devices. This Letter is useful for exploring the new potential materials for resistive switching memory device, and provides the visible-light as a new control method for resistive switching random access memory (RRAM).",

author = "Bai Sun and Xiaoping Li and Dandan Liang and Peng Chen",

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T1 - Effect of visible-light illumination on resistive switching characteristics in Ag/Ce2W3O12/FTO devices

AU - Sun, Bai

AU - Li, Xiaoping

AU - Liang, Dandan

AU - Chen, Peng

PY - 2016/1/1

Y1 - 2016/1/1

N2 - The resistive switching device is a fascinating candidate for next generation nonvolatile memories. In this Letter, we report a simple hydrothermal way to prepare Ce2W3O12 powder. Furthermore, we fabricated a resistive switching memory device with Ag/Ce2W3O12/fluorine-doped tin oxide (FTO) structure. Moreover, we observed the effect of visible-light illumination on resistive switching memory behaviour in Ag/Ce2W3O12/FTO devices. This Letter is useful for exploring the new potential materials for resistive switching memory device, and provides the visible-light as a new control method for resistive switching random access memory (RRAM).

AB - The resistive switching device is a fascinating candidate for next generation nonvolatile memories. In this Letter, we report a simple hydrothermal way to prepare Ce2W3O12 powder. Furthermore, we fabricated a resistive switching memory device with Ag/Ce2W3O12/fluorine-doped tin oxide (FTO) structure. Moreover, we observed the effect of visible-light illumination on resistive switching memory behaviour in Ag/Ce2W3O12/FTO devices. This Letter is useful for exploring the new potential materials for resistive switching memory device, and provides the visible-light as a new control method for resistive switching random access memory (RRAM).

UR - https://www.scopus.com/pages/publications/84948418169

U2 - 10.1016/j.cplett.2015.11.022

DO - 10.1016/j.cplett.2015.11.022

M3 - 文章

AN - SCOPUS:84948418169

SN - 0009-2614

VL - 643

SP - 66

EP - 70

JO - Chemical Physics Letters

JF - Chemical Physics Letters

ER -

Effect of visible-light illumination on resistive switching characteristics in Ag/Ce₂W₃O₁₂/FTO devices

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