Effect of 60Coγ ray radiation on electrical properties of SiGe HBTs at low temperatures

Yahui Feng; Hongxia Guo; Wuying Ma; Jiawen Hu; Xiaoping Ouyang; Jinxin Zhang; Fengqi Zhang; Hong Zhang; Ruxue Bai; Xiaohua Ma; Yue Hao

doi:10.1016/j.mejo.2023.106058

Effect of ⁶⁰Coγ ray radiation on electrical properties of SiGe HBTs at low temperatures

Yahui Feng
, Hongxia Guo
, Wuying Ma
, Jiawen Hu
, Xiaoping Ouyang
, Jinxin Zhang
, Fengqi Zhang
, Hong Zhang
, Ruxue Bai
, Xiaohua Ma
, Yue Hao

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

In this article, total ionizing dose (TID) irradiation experiments were carried out on germanium-silicon heterojunction bipolar transistors (SiGe HBTs) under different bias and temperature conditions. The electrical performance and noise characteristics of the device were characterized before and after irradiation using a semiconductor parameter analyzer and a 1/f noise test system, respectively. The variation of radiation sensitivity parameters with the TID effect and temperature of the device was obtained, and the mechanism of radiation damage degradation was also identified. Results suggest that the oxide-trap charges and interface states induced by irradiation are the main causes for SiGe HBT electrical parameters degradation. With the decreased temperature, Gummel characteristics and 1/f noise are significantly improved. It's found that oxide-trap charges and interface states generated at 93 K is less than that at 300 K. This work lays the foundation for the application of SiGe HBT in aerospace area.

Original language	English
Article number	106058
Journal	Microelectronics Journal
Volume	144
DOIs	https://doi.org/10.1016/j.mejo.2023.106058
State	Published - Feb 2024
Externally published	Yes

Keywords

Low temperature
Silicon-germanium heterojunction bipolar tran-sistor
Total ionizing dose effect
[Formula presented] Noise

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10.1016/j.mejo.2023.106058

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@article{e27ca50d78b94d728da0689ed5818efc,

title = "Effect of 60Coγ ray radiation on electrical properties of SiGe HBTs at low temperatures",

abstract = "In this article, total ionizing dose (TID) irradiation experiments were carried out on germanium-silicon heterojunction bipolar transistors (SiGe HBTs) under different bias and temperature conditions. The electrical performance and noise characteristics of the device were characterized before and after irradiation using a semiconductor parameter analyzer and a 1/f noise test system, respectively. The variation of radiation sensitivity parameters with the TID effect and temperature of the device was obtained, and the mechanism of radiation damage degradation was also identified. Results suggest that the oxide-trap charges and interface states induced by irradiation are the main causes for SiGe HBT electrical parameters degradation. With the decreased temperature, Gummel characteristics and 1/f noise are significantly improved. It's found that oxide-trap charges and interface states generated at 93 K is less than that at 300 K. This work lays the foundation for the application of SiGe HBT in aerospace area.",

keywords = "Low temperature, Silicon-germanium heterojunction bipolar tran-sistor, Total ionizing dose effect, [Formula presented] Noise",

author = "Yahui Feng and Hongxia Guo and Wuying Ma and Jiawen Hu and Xiaoping Ouyang and Jinxin Zhang and Fengqi Zhang and Hong Zhang and Ruxue Bai and Xiaohua Ma and Yue Hao",

note = "Publisher Copyright: {\textcopyright} 2023",

year = "2024",

month = feb,

doi = "10.1016/j.mejo.2023.106058",

language = "英语",

volume = "144",

journal = "Microelectronics Journal",

issn = "0026-2692",

publisher = "Elsevier Ltd",

}

TY - JOUR

T1 - Effect of 60Coγ ray radiation on electrical properties of SiGe HBTs at low temperatures

AU - Feng, Yahui

AU - Guo, Hongxia

AU - Ma, Wuying

AU - Hu, Jiawen

AU - Ouyang, Xiaoping

AU - Zhang, Jinxin

AU - Zhang, Fengqi

AU - Zhang, Hong

AU - Bai, Ruxue

AU - Ma, Xiaohua

AU - Hao, Yue

PY - 2024/2

Y1 - 2024/2

N2 - In this article, total ionizing dose (TID) irradiation experiments were carried out on germanium-silicon heterojunction bipolar transistors (SiGe HBTs) under different bias and temperature conditions. The electrical performance and noise characteristics of the device were characterized before and after irradiation using a semiconductor parameter analyzer and a 1/f noise test system, respectively. The variation of radiation sensitivity parameters with the TID effect and temperature of the device was obtained, and the mechanism of radiation damage degradation was also identified. Results suggest that the oxide-trap charges and interface states induced by irradiation are the main causes for SiGe HBT electrical parameters degradation. With the decreased temperature, Gummel characteristics and 1/f noise are significantly improved. It's found that oxide-trap charges and interface states generated at 93 K is less than that at 300 K. This work lays the foundation for the application of SiGe HBT in aerospace area.

AB - In this article, total ionizing dose (TID) irradiation experiments were carried out on germanium-silicon heterojunction bipolar transistors (SiGe HBTs) under different bias and temperature conditions. The electrical performance and noise characteristics of the device were characterized before and after irradiation using a semiconductor parameter analyzer and a 1/f noise test system, respectively. The variation of radiation sensitivity parameters with the TID effect and temperature of the device was obtained, and the mechanism of radiation damage degradation was also identified. Results suggest that the oxide-trap charges and interface states induced by irradiation are the main causes for SiGe HBT electrical parameters degradation. With the decreased temperature, Gummel characteristics and 1/f noise are significantly improved. It's found that oxide-trap charges and interface states generated at 93 K is less than that at 300 K. This work lays the foundation for the application of SiGe HBT in aerospace area.

KW - Low temperature

KW - Silicon-germanium heterojunction bipolar tran-sistor

KW - Total ionizing dose effect

KW - [Formula presented] Noise

UR - https://www.scopus.com/pages/publications/85198496789

U2 - 10.1016/j.mejo.2023.106058

DO - 10.1016/j.mejo.2023.106058

M3 - 文章

AN - SCOPUS:85198496789

SN - 0026-2692

VL - 144

JO - Microelectronics Journal

JF - Microelectronics Journal

M1 - 106058

ER -

Effect of ⁶⁰Coγ ray radiation on electrical properties of SiGe HBTs at low temperatures

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Keywords

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