Effect of SrTiO3 buffer layers on crystallization and properties of sol-gel derived Pb(Zr0.52Ti0.48)O3 thin films

Hong Xin; Wei Ren; Xiaoqing Wu; Peng Shi; Wanlin Zhu; Xiaohua Zhang

doi:10.1080/00150193.2010.484664

Effect of SrTiO₃ buffer layers on crystallization and properties of sol-gel derived Pb(Zr_0.52Ti_0.48)O₃ thin films

Hong Xin
, Wei Ren
, Xiaoqing Wu
, Peng Shi
, Wanlin Zhu
, Xiaohua Zhang

Faculty of Electronic and Information Engineering

Xi'an Jiaotong University
Xi'an University of Architecture and Technology

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

Ferroelectric PbZr_0.52Ti_0.48O₃ (PZT) thin films were prepared by a sol-gel method using SrTiO₃ (STO) buffer layers. The effect of SrTiO₃ buffer layers on the crystallization and electrical properties of PZT thin films has been investigated. X-ray diffraction shows that the STO buffer layers have a significant effect on the crystallization, orientation and electrical properties of PZT thin films. PZT thin films are fully crystallized at 550°C with SrTiO₃ buffer layers. The (111) preferential orientation becomes stronger first with increasing thickness of SrTiO₃ buffer layer and then weakens after a critical thickness. The electrical properties, as well as the crystallization mechanism in association with SrTiO₃ buffer layers are investigated and discussed.

Original language	English
Pages (from-to)	206-212
Number of pages	7
Journal	Ferroelectrics
Volume	406
Issue number	1
DOIs	https://doi.org/10.1080/00150193.2010.484664
State	Published - 2010
Event	12th International Meeting on Ferroelectricity, IMF-12 and the 18th IEEE International Symposium on Applications of Ferroelectrics, ISAF-18 - Xi'an, China Duration: 23 Aug 2009 → 27 Aug 2009

Keywords

Buffer layers
Crystallization
Electrical properties
PZT
Preferential orientation
Thin films

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10.1080/00150193.2010.484664

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title = "Effect of SrTiO3 buffer layers on crystallization and properties of sol-gel derived Pb(Zr0.52Ti0.48)O3 thin films",

abstract = "Ferroelectric PbZr0.52Ti0.48O3 (PZT) thin films were prepared by a sol-gel method using SrTiO3 (STO) buffer layers. The effect of SrTiO3 buffer layers on the crystallization and electrical properties of PZT thin films has been investigated. X-ray diffraction shows that the STO buffer layers have a significant effect on the crystallization, orientation and electrical properties of PZT thin films. PZT thin films are fully crystallized at 550°C with SrTiO3 buffer layers. The (111) preferential orientation becomes stronger first with increasing thickness of SrTiO3 buffer layer and then weakens after a critical thickness. The electrical properties, as well as the crystallization mechanism in association with SrTiO3 buffer layers are investigated and discussed.",

keywords = "Buffer layers, Crystallization, Electrical properties, PZT, Preferential orientation, Thin films",

author = "Hong Xin and Wei Ren and Xiaoqing Wu and Peng Shi and Wanlin Zhu and Xiaohua Zhang",

year = "2010",

doi = "10.1080/00150193.2010.484664",

language = "英语",

volume = "406",

pages = "206--212",

journal = "Ferroelectrics",

issn = "0015-0193",

publisher = "Taylor and Francis Ltd.",

number = "1",

note = "12th International Meeting on Ferroelectricity, IMF-12 and the 18th IEEE International Symposium on Applications of Ferroelectrics, ISAF-18 ; Conference date: 23-08-2009 Through 27-08-2009",

}

TY - JOUR

T1 - Effect of SrTiO3 buffer layers on crystallization and properties of sol-gel derived Pb(Zr0.52Ti0.48)O3 thin films

AU - Xin, Hong

AU - Ren, Wei

AU - Wu, Xiaoqing

AU - Shi, Peng

AU - Zhu, Wanlin

AU - Zhang, Xiaohua

PY - 2010

Y1 - 2010

N2 - Ferroelectric PbZr0.52Ti0.48O3 (PZT) thin films were prepared by a sol-gel method using SrTiO3 (STO) buffer layers. The effect of SrTiO3 buffer layers on the crystallization and electrical properties of PZT thin films has been investigated. X-ray diffraction shows that the STO buffer layers have a significant effect on the crystallization, orientation and electrical properties of PZT thin films. PZT thin films are fully crystallized at 550°C with SrTiO3 buffer layers. The (111) preferential orientation becomes stronger first with increasing thickness of SrTiO3 buffer layer and then weakens after a critical thickness. The electrical properties, as well as the crystallization mechanism in association with SrTiO3 buffer layers are investigated and discussed.

AB - Ferroelectric PbZr0.52Ti0.48O3 (PZT) thin films were prepared by a sol-gel method using SrTiO3 (STO) buffer layers. The effect of SrTiO3 buffer layers on the crystallization and electrical properties of PZT thin films has been investigated. X-ray diffraction shows that the STO buffer layers have a significant effect on the crystallization, orientation and electrical properties of PZT thin films. PZT thin films are fully crystallized at 550°C with SrTiO3 buffer layers. The (111) preferential orientation becomes stronger first with increasing thickness of SrTiO3 buffer layer and then weakens after a critical thickness. The electrical properties, as well as the crystallization mechanism in association with SrTiO3 buffer layers are investigated and discussed.

KW - Buffer layers

KW - Crystallization

KW - Electrical properties

KW - PZT

KW - Preferential orientation

KW - Thin films

UR - https://www.scopus.com/pages/publications/79955695576

U2 - 10.1080/00150193.2010.484664

DO - 10.1080/00150193.2010.484664

M3 - 会议文章

AN - SCOPUS:79955695576

SN - 0015-0193

VL - 406

SP - 206

EP - 212

JO - Ferroelectrics

JF - Ferroelectrics

IS - 1

T2 - 12th International Meeting on Ferroelectricity, IMF-12 and the 18th IEEE International Symposium on Applications of Ferroelectrics, ISAF-18

Y2 - 23 August 2009 through 27 August 2009

ER -

Effect of SrTiO₃ buffer layers on crystallization and properties of sol-gel derived Pb(Zr_0.52Ti_0.48)O₃ thin films

Abstract

Keywords

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