Effect of Pb content in target on electrical properties of laser ablation derived lead zirconate titanate thin films

Zhan Jie Wang; Kaoru Kikuchi; Ryutaro Maeda

doi:10.1143/jjap.39.5413

Effect of Pb content in target on electrical properties of laser ablation derived lead zirconate titanate thin films

Zhan Jie Wang
, Kaoru Kikuchi
, Ryutaro Maeda

National Institute of Advanced Industrial Science and Technology
Tohoku University

Research output: Contribution to journal › Article › peer-review

63 Scopus citations

Abstract

Thin films of Pb(Zr_0.52Ti_0.48)O₃(PZT) 1.8-2.0 μm thick on a Pt/Ti/SiO₂/Si substrate were prepared by excimer laser ablation and were crystallized by subsequent annealing. Crystalline phases in the PZT films were investigated by X-ray diffraction analysis (XRD). The microstructure and composition of the films were studied by scanning electron microscopy (SEM) and electron probe microanalysis (EPMA), respectively. The effect of the Pb content of the target on electrical properties of PZT thin films was investigated. The PZT films with a well-crystallized perovskite phase were obtained by adding 20 wt.% excess PbO to the target and annealing at 750°C for 90 min. The remanent polarization and the coercive field of this 0.8 μm think film were 23.6 μC/cm² and 60.0 kV/cm, while the dielectric constant and loss values measured at 1 kHz were approximately 935 and 0.04, respectively.

Original language	English
Pages (from-to)	5413-5417
Number of pages	5
Journal	Japanese Journal of Applied Physics
Volume	39
Issue number	9 B
DOIs	https://doi.org/10.1143/jjap.39.5413
State	Published - Sep 2000
Externally published	Yes

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@article{dff86443a4874882bcf2ad6623620618,

title = "Effect of Pb content in target on electrical properties of laser ablation derived lead zirconate titanate thin films",

abstract = "Thin films of Pb(Zr0.52Ti0.48)O3(PZT) 1.8-2.0 μm thick on a Pt/Ti/SiO2/Si substrate were prepared by excimer laser ablation and were crystallized by subsequent annealing. Crystalline phases in the PZT films were investigated by X-ray diffraction analysis (XRD). The microstructure and composition of the films were studied by scanning electron microscopy (SEM) and electron probe microanalysis (EPMA), respectively. The effect of the Pb content of the target on electrical properties of PZT thin films was investigated. The PZT films with a well-crystallized perovskite phase were obtained by adding 20 wt.\% excess PbO to the target and annealing at 750°C for 90 min. The remanent polarization and the coercive field of this 0.8 μm think film were 23.6 μC/cm2 and 60.0 kV/cm, while the dielectric constant and loss values measured at 1 kHz were approximately 935 and 0.04, respectively.",

author = "Wang, \{Zhan Jie\} and Kaoru Kikuchi and Ryutaro Maeda",

year = "2000",

month = sep,

doi = "10.1143/jjap.39.5413",

language = "英语",

volume = "39",

pages = "5413--5417",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Institute of Physics",

number = "9 B",

}

TY - JOUR

T1 - Effect of Pb content in target on electrical properties of laser ablation derived lead zirconate titanate thin films

AU - Wang, Zhan Jie

AU - Kikuchi, Kaoru

AU - Maeda, Ryutaro

PY - 2000/9

Y1 - 2000/9

N2 - Thin films of Pb(Zr0.52Ti0.48)O3(PZT) 1.8-2.0 μm thick on a Pt/Ti/SiO2/Si substrate were prepared by excimer laser ablation and were crystallized by subsequent annealing. Crystalline phases in the PZT films were investigated by X-ray diffraction analysis (XRD). The microstructure and composition of the films were studied by scanning electron microscopy (SEM) and electron probe microanalysis (EPMA), respectively. The effect of the Pb content of the target on electrical properties of PZT thin films was investigated. The PZT films with a well-crystallized perovskite phase were obtained by adding 20 wt.% excess PbO to the target and annealing at 750°C for 90 min. The remanent polarization and the coercive field of this 0.8 μm think film were 23.6 μC/cm2 and 60.0 kV/cm, while the dielectric constant and loss values measured at 1 kHz were approximately 935 and 0.04, respectively.

AB - Thin films of Pb(Zr0.52Ti0.48)O3(PZT) 1.8-2.0 μm thick on a Pt/Ti/SiO2/Si substrate were prepared by excimer laser ablation and were crystallized by subsequent annealing. Crystalline phases in the PZT films were investigated by X-ray diffraction analysis (XRD). The microstructure and composition of the films were studied by scanning electron microscopy (SEM) and electron probe microanalysis (EPMA), respectively. The effect of the Pb content of the target on electrical properties of PZT thin films was investigated. The PZT films with a well-crystallized perovskite phase were obtained by adding 20 wt.% excess PbO to the target and annealing at 750°C for 90 min. The remanent polarization and the coercive field of this 0.8 μm think film were 23.6 μC/cm2 and 60.0 kV/cm, while the dielectric constant and loss values measured at 1 kHz were approximately 935 and 0.04, respectively.

UR - https://www.scopus.com/pages/publications/0034262439

U2 - 10.1143/jjap.39.5413

DO - 10.1143/jjap.39.5413

M3 - 文章

AN - SCOPUS:0034262439

SN - 0021-4922

VL - 39

SP - 5413

EP - 5417

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 9 B

ER -

Effect of Pb content in target on electrical properties of laser ablation derived lead zirconate titanate thin films

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