Effect of Growth Temperature and Ammonia Flow on the Crystal Structure and Morphology of InN Synthesized by HCVD

InN materials were synthesized on Si (111) substrate by E self-made halide chemical vapor deposition (HCVD) device with expanded blended growth area of reacton source. Indium chloride (InCl₂), which has a lower subiimaton temperature was used as the indium source. The effect of growth temperature and ammonia flow on the structure and morphology of InN was dscussed. The changes in the crystal structure morphology and elemental composition of InN were investigated by X-raydiffraction (XRD) scanning election microscopy (SEM) and X-ray energy spectroscopy (EDS), respectively. The resuts show that： when the NH₃ flow is unchanged, the crystal morphology of InN is transformed from a dispersed flaky morphology into an intertwined coral-like morphology by increasing growth temperature and the orentaton of (100) plane is enhanced. Meanwhlle, the crystal quality is improved. When the growth temperature keeps constant, the crystal morphology of InN is transformed from a coral-like morphology into a vertical columnar morphology by increasmg ammonia gas flow, and the trend of crystal orientations changes from dominated non-polar (100) plane to overwhelming polar (002) plane. These research results are instructive for the controllable growth of InN nanomaterials.