@inproceedings{16bb1d49bd8e4a47a8f32117731e6486,
title = "Effect of Flow Rate and Precursor Sublimation Temperature on the LPCVD Growth of Hexagonal Boron Nitride",
abstract = "Hexagonal boron nitride (h-BN) is known as promising 2D material with a wide band-gap ( 5.2 sim 5.9 eV) which has high breakdown strength. To synthesize h-BN films, chemical vapor deposition (CVD) method is proved to be an effective method that allows the scaled synthesis of h-BN. In this study, we demonstrate a low pressure chemical vapor deposition (LPCVD) method to synthesize complete and uniform h-BN films. In order to obtain high crystalline h-BN films, we studied the flow rate of carrier gas and precursor sublimation temperature on the growth of h-BN films. The results indicate the flow rate of carrier gas has little influence on growth of h-BN films. Nevertheless, the lower precursor sublimation temperature contributes to lower growth rate, which makes the thickness of h-BN films is easily controlled. When the sublimation temperature is more than 100 the thickness of h-BN films is hard to control. The breakdown strength of h-BN films is higher than 9.0 MV/cm from the I-V test, which makes h-BN films ideal substrates and insulators for 2D microelectronic devices.",
keywords = "2D material, Breakdown strength, CVD, Electrochemical polished, H-BN, Synthesis",
author = "Dujiao Zhang and Guodong Meng and Kejing Wang and Xinyu Gao and Chengye Dong and Feihong Wu and Yonghong Cheng",
note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 2nd IEEE International Conference on Dielectrics, ICD 2018 ; Conference date: 01-07-2018 Through 05-07-2018",
year = "2018",
month = sep,
day = "19",
doi = "10.1109/ICD.2018.8468456",
language = "英语",
series = "2018 IEEE 2nd International Conference on Dielectrics, ICD 2018",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2018 IEEE 2nd International Conference on Dielectrics, ICD 2018",
}