Effect of Electrode Materials on Nonvolatile Resistive Switching Memory Behaviors of Metal/In2S3/Mo/Glass Devices

Tao Guo; Xuejiao Zhang; Bai Sun; Shuangsuo Mao; Shouhui Zhu; Pingping Zheng; Yudong Xia; Zhou Yu

doi:10.1007/s11664-018-6436-x

Effect of Electrode Materials on Nonvolatile Resistive Switching Memory Behaviors of Metal/In₂S₃/Mo/Glass Devices

Tao Guo
, Xuejiao Zhang
, Bai Sun
, Shuangsuo Mao
, Shouhui Zhu
, Pingping Zheng
, Yudong Xia
, Zhou Yu

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The resistive switching effect is a fascinating physical phenomenon in the development of next-generation nonvolatile memory devices. In this work, the resistive switching memory behaviors of metal/In₂S₃/Mo/glass devices have been investigated. We observed that the top electrode materials can affect the resistive switching memory behaviors of such devices. We have also found that the devices represent an outstanding memory behavior with the largest HRS/LRS resistance ratio (storage window) when using Au as the top electrode.

Original language	English
Pages (from-to)	5417-5421
Number of pages	5
Journal	Journal of Electronic Materials
Volume	47
Issue number	9
DOIs	https://doi.org/10.1007/s11664-018-6436-x
State	Published - 1 Sep 2018
Externally published	Yes

Keywords

InS film
Resistive switching
electrode materials
memory device

Access to Document

10.1007/s11664-018-6436-x

Cite this

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title = "Effect of Electrode Materials on Nonvolatile Resistive Switching Memory Behaviors of Metal/In2S3/Mo/Glass Devices",

abstract = "The resistive switching effect is a fascinating physical phenomenon in the development of next-generation nonvolatile memory devices. In this work, the resistive switching memory behaviors of metal/In2S3/Mo/glass devices have been investigated. We observed that the top electrode materials can affect the resistive switching memory behaviors of such devices. We have also found that the devices represent an outstanding memory behavior with the largest HRS/LRS resistance ratio (storage window) when using Au as the top electrode.",

keywords = "InS film, Resistive switching, electrode materials, memory device",

author = "Tao Guo and Xuejiao Zhang and Bai Sun and Shuangsuo Mao and Shouhui Zhu and Pingping Zheng and Yudong Xia and Zhou Yu",

note = "Publisher Copyright: {\textcopyright} 2018, The Minerals, Metals \& Materials Society.",

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doi = "10.1007/s11664-018-6436-x",

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T1 - Effect of Electrode Materials on Nonvolatile Resistive Switching Memory Behaviors of Metal/In2S3/Mo/Glass Devices

AU - Guo, Tao

AU - Zhang, Xuejiao

AU - Sun, Bai

AU - Mao, Shuangsuo

AU - Zhu, Shouhui

AU - Zheng, Pingping

AU - Xia, Yudong

AU - Yu, Zhou

PY - 2018/9/1

Y1 - 2018/9/1

N2 - The resistive switching effect is a fascinating physical phenomenon in the development of next-generation nonvolatile memory devices. In this work, the resistive switching memory behaviors of metal/In2S3/Mo/glass devices have been investigated. We observed that the top electrode materials can affect the resistive switching memory behaviors of such devices. We have also found that the devices represent an outstanding memory behavior with the largest HRS/LRS resistance ratio (storage window) when using Au as the top electrode.

AB - The resistive switching effect is a fascinating physical phenomenon in the development of next-generation nonvolatile memory devices. In this work, the resistive switching memory behaviors of metal/In2S3/Mo/glass devices have been investigated. We observed that the top electrode materials can affect the resistive switching memory behaviors of such devices. We have also found that the devices represent an outstanding memory behavior with the largest HRS/LRS resistance ratio (storage window) when using Au as the top electrode.

KW - InS film

KW - Resistive switching

KW - electrode materials

KW - memory device

UR - https://www.scopus.com/pages/publications/85048694140

U2 - 10.1007/s11664-018-6436-x

DO - 10.1007/s11664-018-6436-x

M3 - 文章

AN - SCOPUS:85048694140

SN - 0361-5235

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SP - 5417

EP - 5421

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 9