Abstract
Traditional theory is difficult to describe the heat transfer mechanism ,When the characteristic dimensions of high electron mobility transistor is comparable with the mean free path of phonons. A lattice boltzmann method is proposed to study the collisions and transfer processes of phonons and electrons. purpose of our simulation was to determine if the doping concentration would be useful for the temperature distributions of HEMT.
| Original language | English |
|---|---|
| Pages (from-to) | 2335-2338 |
| Number of pages | 4 |
| Journal | Kung Cheng Je Wu Li Hsueh Pao/Journal of Engineering Thermophysics |
| Volume | 34 |
| Issue number | 12 |
| State | Published - Dec 2013 |
Keywords
- Doping concentration
- HEMT
- Lattice Boltzmann method
- Temperature distribution