Effect of dopant spatial distribution on ferroelectric Al-doped HfO2thin films in post-deposition annealing

Lulu Yao; Xin Liu; Yonghong Cheng

doi:10.1109/ISAF43169.2019.9034929

Effect of dopant spatial distribution on ferroelectric Al-doped HfO₂thin films in post-deposition annealing

Lulu Yao
, Xin Liu
, Yonghong Cheng

School of Electrical Engineering

Xi'an Jiaotong University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

The ferroelectric property of HfO₂ thin films with different Al-dopants spatial distribution is investigated both in post-metallization annealing (PMA) and post-deposition annealing (PDA). The ferroelectric enhancement of the top electrode during rapid thermal annealing (RTA) is only effective in the single-layer Al distributed HfO₂ thin films. Without capping electrodes in crystallization anneal, the remanent polarization of the double-layer Al distributed HfO₂ thin films is larger, which may be attributed to the thermal diffusion stress generated by the Al-dopants double-layer distribution during annealing.

Original language	English
Title of host publication	2019 IEEE International Symposium on Applications of Ferroelectrics, ISAF 2019 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781538694640
DOIs	https://doi.org/10.1109/ISAF43169.2019.9034929
State	Published - Jul 2019
Event	2019 IEEE International Symposium on Applications of Ferroelectrics, ISAF 2019 - Lausanne, Switzerland Duration: 14 Jul 2019 → 19 Jul 2019

Publication series

Name	2019 IEEE International Symposium on Applications of Ferroelectrics, ISAF 2019 - Proceedings

Conference

Conference	2019 IEEE International Symposium on Applications of Ferroelectrics, ISAF 2019
Country/Territory	Switzerland
City	Lausanne
Period	14/07/19 → 19/07/19

Keywords

atomic layer deposition
dopant spatial distribution
the Al-doped HfO film

Access to Document

10.1109/ISAF43169.2019.9034929

Cite this

Yao, L., Liu, X., & Cheng, Y. (2019). Effect of dopant spatial distribution on ferroelectric Al-doped HfO₂thin films in post-deposition annealing. In 2019 IEEE International Symposium on Applications of Ferroelectrics, ISAF 2019 - Proceedings Article 9034929 (2019 IEEE International Symposium on Applications of Ferroelectrics, ISAF 2019 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISAF43169.2019.9034929

Yao, Lulu ; Liu, Xin ; Cheng, Yonghong. / Effect of dopant spatial distribution on ferroelectric Al-doped HfO₂thin films in post-deposition annealing. 2019 IEEE International Symposium on Applications of Ferroelectrics, ISAF 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. (2019 IEEE International Symposium on Applications of Ferroelectrics, ISAF 2019 - Proceedings).

@inproceedings{f4c5463d97da42cc946a6783b2a4d7ae,

title = "Effect of dopant spatial distribution on ferroelectric Al-doped HfO2thin films in post-deposition annealing",

abstract = "The ferroelectric property of HfO2 thin films with different Al-dopants spatial distribution is investigated both in post-metallization annealing (PMA) and post-deposition annealing (PDA). The ferroelectric enhancement of the top electrode during rapid thermal annealing (RTA) is only effective in the single-layer Al distributed HfO2 thin films. Without capping electrodes in crystallization anneal, the remanent polarization of the double-layer Al distributed HfO2 thin films is larger, which may be attributed to the thermal diffusion stress generated by the Al-dopants double-layer distribution during annealing.",

keywords = "atomic layer deposition, dopant spatial distribution, the Al-doped HfO film",

author = "Lulu Yao and Xin Liu and Yonghong Cheng",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 IEEE International Symposium on Applications of Ferroelectrics, ISAF 2019 ; Conference date: 14-07-2019 Through 19-07-2019",

year = "2019",

month = jul,

doi = "10.1109/ISAF43169.2019.9034929",

language = "英语",

series = "2019 IEEE International Symposium on Applications of Ferroelectrics, ISAF 2019 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2019 IEEE International Symposium on Applications of Ferroelectrics, ISAF 2019 - Proceedings",

}

Yao, L, Liu, X & Cheng, Y 2019, Effect of dopant spatial distribution on ferroelectric Al-doped HfO₂thin films in post-deposition annealing. in 2019 IEEE International Symposium on Applications of Ferroelectrics, ISAF 2019 - Proceedings., 9034929, 2019 IEEE International Symposium on Applications of Ferroelectrics, ISAF 2019 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 2019 IEEE International Symposium on Applications of Ferroelectrics, ISAF 2019, Lausanne, Switzerland, 14/07/19. https://doi.org/10.1109/ISAF43169.2019.9034929

Effect of dopant spatial distribution on ferroelectric Al-doped HfO₂thin films in post-deposition annealing. / Yao, Lulu; Liu, Xin; Cheng, Yonghong.
2019 IEEE International Symposium on Applications of Ferroelectrics, ISAF 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. 9034929 (2019 IEEE International Symposium on Applications of Ferroelectrics, ISAF 2019 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Effect of dopant spatial distribution on ferroelectric Al-doped HfO2thin films in post-deposition annealing

AU - Yao, Lulu

AU - Liu, Xin

AU - Cheng, Yonghong

PY - 2019/7

Y1 - 2019/7

N2 - The ferroelectric property of HfO2 thin films with different Al-dopants spatial distribution is investigated both in post-metallization annealing (PMA) and post-deposition annealing (PDA). The ferroelectric enhancement of the top electrode during rapid thermal annealing (RTA) is only effective in the single-layer Al distributed HfO2 thin films. Without capping electrodes in crystallization anneal, the remanent polarization of the double-layer Al distributed HfO2 thin films is larger, which may be attributed to the thermal diffusion stress generated by the Al-dopants double-layer distribution during annealing.

AB - The ferroelectric property of HfO2 thin films with different Al-dopants spatial distribution is investigated both in post-metallization annealing (PMA) and post-deposition annealing (PDA). The ferroelectric enhancement of the top electrode during rapid thermal annealing (RTA) is only effective in the single-layer Al distributed HfO2 thin films. Without capping electrodes in crystallization anneal, the remanent polarization of the double-layer Al distributed HfO2 thin films is larger, which may be attributed to the thermal diffusion stress generated by the Al-dopants double-layer distribution during annealing.

KW - atomic layer deposition

KW - dopant spatial distribution

KW - the Al-doped HfO film

UR - https://www.scopus.com/pages/publications/85083079609

U2 - 10.1109/ISAF43169.2019.9034929

DO - 10.1109/ISAF43169.2019.9034929

M3 - 会议稿件

AN - SCOPUS:85083079609

T3 - 2019 IEEE International Symposium on Applications of Ferroelectrics, ISAF 2019 - Proceedings

BT - 2019 IEEE International Symposium on Applications of Ferroelectrics, ISAF 2019 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2019 IEEE International Symposium on Applications of Ferroelectrics, ISAF 2019

Y2 - 14 July 2019 through 19 July 2019

ER -

Yao L, Liu X, Cheng Y. Effect of dopant spatial distribution on ferroelectric Al-doped HfO₂thin films in post-deposition annealing. In 2019 IEEE International Symposium on Applications of Ferroelectrics, ISAF 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2019. 9034929. (2019 IEEE International Symposium on Applications of Ferroelectrics, ISAF 2019 - Proceedings). doi: 10.1109/ISAF43169.2019.9034929