Effect of depth of Buried-In Tungsten Electrodes on Single Crystal Diamond Photodetector

Z. C. Liu; F. N. Li; W. Wang; J. W. Zhang; F. Lin; H. X. Wang

doi:10.1557/adv.2016.84

Effect of depth of Buried-In Tungsten Electrodes on Single Crystal Diamond Photodetector

Z. C. Liu
, F. N. Li
, W. Wang
, J. W. Zhang
, F. Lin
, H. X. Wang

Faculty of Electronic and Information Engineering

Xi'an Jiaotong University

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

The performance of new type three dimensional buried-in electrode structure ultraviolet photodetector fabricated on single crystal diamond epitaxial layer was investigated. The epitaxial layer was grown on high-pressure-higherature Ib-type diamond substrate. Then the buried-in electrodes with different depths were formed by oxygen plasma reactive ion etching method and radio frequency magnetron sputtering technique on this diamond layer. Compared with that of traditional planar electrode photodetector, the responsivity of buried-in electrode photodetector shows higher value, which reaches the highest when the electrode depth is 100 nm.

Original language	English
Pages (from-to)	1099-1104
Number of pages	6
Journal	MRS Advances
Volume	1
Issue number	16
DOIs	https://doi.org/10.1557/adv.2016.84
State	Published - 2016

Keywords

Optoelectronic
devices
diamond

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10.1557/adv.2016.84

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title = "Effect of depth of Buried-In Tungsten Electrodes on Single Crystal Diamond Photodetector",

abstract = "The performance of new type three dimensional buried-in electrode structure ultraviolet photodetector fabricated on single crystal diamond epitaxial layer was investigated. The epitaxial layer was grown on high-pressure-higherature Ib-type diamond substrate. Then the buried-in electrodes with different depths were formed by oxygen plasma reactive ion etching method and radio frequency magnetron sputtering technique on this diamond layer. Compared with that of traditional planar electrode photodetector, the responsivity of buried-in electrode photodetector shows higher value, which reaches the highest when the electrode depth is 100 nm.",

keywords = "Optoelectronic, devices, diamond",

author = "Liu, \{Z. C.\} and Li, \{F. N.\} and W. Wang and Zhang, \{J. W.\} and F. Lin and Wang, \{H. X.\}",

note = "Publisher Copyright: {\textcopyright} 2016 Materials Research Society.",

year = "2016",

doi = "10.1557/adv.2016.84",

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volume = "1",

pages = "1099--1104",

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TY - JOUR

T1 - Effect of depth of Buried-In Tungsten Electrodes on Single Crystal Diamond Photodetector

AU - Liu, Z. C.

AU - Li, F. N.

AU - Wang, W.

AU - Zhang, J. W.

AU - Lin, F.

AU - Wang, H. X.

PY - 2016

Y1 - 2016

N2 - The performance of new type three dimensional buried-in electrode structure ultraviolet photodetector fabricated on single crystal diamond epitaxial layer was investigated. The epitaxial layer was grown on high-pressure-higherature Ib-type diamond substrate. Then the buried-in electrodes with different depths were formed by oxygen plasma reactive ion etching method and radio frequency magnetron sputtering technique on this diamond layer. Compared with that of traditional planar electrode photodetector, the responsivity of buried-in electrode photodetector shows higher value, which reaches the highest when the electrode depth is 100 nm.

AB - The performance of new type three dimensional buried-in electrode structure ultraviolet photodetector fabricated on single crystal diamond epitaxial layer was investigated. The epitaxial layer was grown on high-pressure-higherature Ib-type diamond substrate. Then the buried-in electrodes with different depths were formed by oxygen plasma reactive ion etching method and radio frequency magnetron sputtering technique on this diamond layer. Compared with that of traditional planar electrode photodetector, the responsivity of buried-in electrode photodetector shows higher value, which reaches the highest when the electrode depth is 100 nm.

KW - Optoelectronic

KW - devices

KW - diamond

UR - https://www.scopus.com/pages/publications/85017246182

U2 - 10.1557/adv.2016.84

DO - 10.1557/adv.2016.84

M3 - 文章

AN - SCOPUS:85017246182

SN - 2059-8521

VL - 1

SP - 1099

EP - 1104

JO - MRS Advances

JF - MRS Advances

IS - 16

ER -

Effect of depth of Buried-In Tungsten Electrodes on Single Crystal Diamond Photodetector

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Keywords

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