Effect of annealing ambient on the thermal stability of Cu/Zr 42Si9N49/Si contact system

Ying Wang; Changchun Zhu; Zhongxiao Song; Chunyu Wu

doi:10.1016/j.matlet.2004.03.009

Effect of annealing ambient on the thermal stability of Cu/Zr ₄₂Si₉N₄₉/Si contact system

Ying Wang
, Changchun Zhu
, Zhongxiao Song
, Chunyu Wu

Xi'an Jiaotong University

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Cu/Zr₄₂Si₉N₄₉/Si contact systems were deposited by direct current-pulsed magnetron sputtering (DC-PMS) technique. The contact systems were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), Auger electron spectroscopy (AES) and four-point probe sheet resistance measurements (R_s), respectively. The sheet resistances of Cu/Zr₄₂Si₉N₄₉/Si contact systems annealed in N₂/H₂ gas mixture were lower than those of specimens annealed in vacuum at 800 °C. It is evident that the residual oxygen contamination from vacuum annealing ambience can affect the sheet resistances of Cu/Zr₄₂Si₉N₄₉/Si contact systems. Compared with vacuum annealing, the thermal stabilities of the contact systems were generally improved after annealing in N₂/H₂ gas mixture.

Original language	English
Pages (from-to)	2510-2513
Number of pages	4
Journal	Materials Letters
Volume	58
Issue number	20
DOIs	https://doi.org/10.1016/j.matlet.2004.03.009
State	Published - Aug 2004

Keywords

Annealing ambience
Diffusion barrier layer
Multiplayer structure
Thin films

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10.1016/j.matlet.2004.03.009

Cite this

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title = "Effect of annealing ambient on the thermal stability of Cu/Zr 42Si9N49/Si contact system",

abstract = "Cu/Zr42Si9N49/Si contact systems were deposited by direct current-pulsed magnetron sputtering (DC-PMS) technique. The contact systems were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), Auger electron spectroscopy (AES) and four-point probe sheet resistance measurements (Rs), respectively. The sheet resistances of Cu/Zr42Si9N49/Si contact systems annealed in N2/H2 gas mixture were lower than those of specimens annealed in vacuum at 800 °C. It is evident that the residual oxygen contamination from vacuum annealing ambience can affect the sheet resistances of Cu/Zr42Si9N49/Si contact systems. Compared with vacuum annealing, the thermal stabilities of the contact systems were generally improved after annealing in N2/H2 gas mixture.",

keywords = "Annealing ambience, Diffusion barrier layer, Multiplayer structure, Thin films",

author = "Ying Wang and Changchun Zhu and Zhongxiao Song and Chunyu Wu",

year = "2004",

month = aug,

doi = "10.1016/j.matlet.2004.03.009",

language = "英语",

volume = "58",

pages = "2510--2513",

journal = "Materials Letters",

issn = "0167-577X",

publisher = "Elsevier B.V.",

number = "20",

}

TY - JOUR

T1 - Effect of annealing ambient on the thermal stability of Cu/Zr 42Si9N49/Si contact system

AU - Wang, Ying

AU - Zhu, Changchun

AU - Song, Zhongxiao

AU - Wu, Chunyu

PY - 2004/8

Y1 - 2004/8

N2 - Cu/Zr42Si9N49/Si contact systems were deposited by direct current-pulsed magnetron sputtering (DC-PMS) technique. The contact systems were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), Auger electron spectroscopy (AES) and four-point probe sheet resistance measurements (Rs), respectively. The sheet resistances of Cu/Zr42Si9N49/Si contact systems annealed in N2/H2 gas mixture were lower than those of specimens annealed in vacuum at 800 °C. It is evident that the residual oxygen contamination from vacuum annealing ambience can affect the sheet resistances of Cu/Zr42Si9N49/Si contact systems. Compared with vacuum annealing, the thermal stabilities of the contact systems were generally improved after annealing in N2/H2 gas mixture.

AB - Cu/Zr42Si9N49/Si contact systems were deposited by direct current-pulsed magnetron sputtering (DC-PMS) technique. The contact systems were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), Auger electron spectroscopy (AES) and four-point probe sheet resistance measurements (Rs), respectively. The sheet resistances of Cu/Zr42Si9N49/Si contact systems annealed in N2/H2 gas mixture were lower than those of specimens annealed in vacuum at 800 °C. It is evident that the residual oxygen contamination from vacuum annealing ambience can affect the sheet resistances of Cu/Zr42Si9N49/Si contact systems. Compared with vacuum annealing, the thermal stabilities of the contact systems were generally improved after annealing in N2/H2 gas mixture.

KW - Annealing ambience

KW - Diffusion barrier layer

KW - Multiplayer structure

KW - Thin films

UR - https://www.scopus.com/pages/publications/2942587174

U2 - 10.1016/j.matlet.2004.03.009

DO - 10.1016/j.matlet.2004.03.009

M3 - 文章

AN - SCOPUS:2942587174

SN - 0167-577X

VL - 58

SP - 2510

EP - 2513

JO - Materials Letters

JF - Materials Letters

IS - 20

ER -

Effect of annealing ambient on the thermal stability of Cu/Zr ₄₂Si₉N₄₉/Si contact system

Abstract

Keywords

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