Doping modification effects on high-power dynamic piezoelectric properties in PIMNT single crystals

In high-power piezoelectric applications such as underwater acoustics systems, piezoelectric materials are subjected to sustained high-voltage excitation, where the mechanical loss factor (Q_m⁻¹) and vibration-induced power loss density (P_l) represent pivotal parameters for device design and operational longevity. This work introduces an electrical transient response methodology to investigate doping modification effects on high-power dynamic piezoelectric properties in PIMNT single crystals. By employing defect engineering through controlled donor (Eu³⁺) and acceptor (Mn^2+/3+) doping, we reveal that stress-dependent piezoelectric response performances are predominantly governed by vacancy redistribution mechanisms. Comparative analysis demonstrates that Mn-doped crystals achieve a harmonious balance between piezoelectric activity (-d₃₁∼420 pC/N) and mechanical stability, exhibiting suppressed mechanical loss (Q_m⁻¹<0.013) and power loss density (P_l < 6000 kW/m³) even at high dynamic vibration stress. Conversely, while Eu-doped variants display enhanced piezoelectric coefficient (-d₃₁) tunability, their performance is constrained by vacancy-mediated loss amplification (Q_m⁻¹>0.045) under high-stress conditions. These observations collectively establish a microstructure-property paradigm that correlates dopant functionality (donor vs. acceptor), defect migration dynamics (V_Pb′′/V_O^∙∙), and nonlinear electromechanical response, offering insights for tailoring piezoelectric materials in high-power transducers.