Doping effect of SiO2/CeO2 on the dielectric, ferroelectric and piezoelectric properties of (Ba0.7Ca 0.3)(Zr0.2Ti0.8)O3 ceramics

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Abstract

Lead-free (Ba0.7Ca0.3)(Zr0.2Ti 0.8)O3 ceramics (BZT-50BCT) with x wt% (x=0,0.05,0.1,0.2,0.4) dopant (SiO2 and CeO2) were prepared by the conventional solid-state reaction from the industry available raw materials. The doping effect of SiO2 and CeO2 with different concentrations on the microstructures and electric properties of BZT-50BCT ceramics was systematically investigated in the present study. Moderate doping level would result in the fine microstructures and the consequent enhanced dielectric, ferroelectric and piezoelectric properties while excessive doping would cause the degradation of the properties. The best piezoelectric performance of d33=476pC/N was achieved by 0.05 wt% CeO2 doping.

Original languageEnglish
Title of host publicationProceedings of 2014 International Symposium on Electrical Insulating Materials, ISEIM 2014
PublisherInstitute of Electrical Engineers of Japan
Pages465-468
Number of pages4
ISBN (Print)9784886860866
DOIs
StatePublished - 2014
Event2014 International Symposium on Electrical Insulating Materials, ISEIM 2014 - Niigata, Japan
Duration: 1 Jun 20145 Jun 2014

Publication series

NameProceedings of the International Symposium on Electrical Insulating Materials

Conference

Conference2014 International Symposium on Electrical Insulating Materials, ISEIM 2014
Country/TerritoryJapan
CityNiigata
Period1/06/145/06/14

Keywords

  • dielectric properties
  • doping
  • piezoelectric properties

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