Domain structure, domain wall mobility and electric properties for PbTiO3 and SrBi2Ta2O9 thin film

Yening Wang; Xiaobing Ren; Jianshe Liu; Zhigang Zhang; Feng Yan; Chaojing Lu; Jinsong Zhu; Huimin Shen

Domain structure, domain wall mobility and electric properties for PbTiO₃ and SrBi₂Ta₂O₉ thin film

Yening Wang
, Xiaobing Ren
, Jianshe Liu
, Zhigang Zhang
, Feng Yan
, Chaojing Lu
, Jinsong Zhu
, Huimin Shen

Nanjing University

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

TEM studies on domain structure in PbTiO₃ thin film show that the domain density depends on the grain size and indirectly on the film thickness. The mobility of domain walls (DWs) has been investigated by in situ TEM and mechanical dissipation techniques, and its contribution to the permittivity (ε) and coercive field (E_c) was analyzed. The weak pinning of DWs in SrBi₂Ta₂O₉ (SBT) was further confirmed by experimental results of the voltage and frequency dependence of the fatigue as well as retention.

Original language	English
Pages (from-to)	589/1 - 598/10
Journal	Ferroelectrics
Volume	231
Issue number	1 -4 pt 3
State	Published - 1999
Externally published	Yes
Event	Proceedings of the 1998 2nd Asian Meeting on Ferrroelectricity (AMF-2) - Singapore, Singapore Duration: 7 Dec 1998 → 11 Dec 1998

Cite this

@article{d24a63d2ad294d87b275f48488b3af11,

title = "Domain structure, domain wall mobility and electric properties for PbTiO3 and SrBi2Ta2O9 thin film",

abstract = "TEM studies on domain structure in PbTiO3 thin film show that the domain density depends on the grain size and indirectly on the film thickness. The mobility of domain walls (DWs) has been investigated by in situ TEM and mechanical dissipation techniques, and its contribution to the permittivity (ε) and coercive field (Ec) was analyzed. The weak pinning of DWs in SrBi2Ta2O9 (SBT) was further confirmed by experimental results of the voltage and frequency dependence of the fatigue as well as retention.",

author = "Yening Wang and Xiaobing Ren and Jianshe Liu and Zhigang Zhang and Feng Yan and Chaojing Lu and Jinsong Zhu and Huimin Shen",

year = "1999",

language = "英语",

volume = "231",

pages = "589/1 -- 598/10",

journal = "Ferroelectrics",

issn = "0015-0193",

publisher = "Taylor and Francis Ltd.",

number = "1 -4 pt 3",

note = "Proceedings of the 1998 2nd Asian Meeting on Ferrroelectricity (AMF-2) ; Conference date: 07-12-1998 Through 11-12-1998",

}

TY - JOUR

T1 - Domain structure, domain wall mobility and electric properties for PbTiO3 and SrBi2Ta2O9 thin film

AU - Wang, Yening

AU - Ren, Xiaobing

AU - Liu, Jianshe

AU - Zhang, Zhigang

AU - Yan, Feng

AU - Lu, Chaojing

AU - Zhu, Jinsong

AU - Shen, Huimin

PY - 1999

Y1 - 1999

N2 - TEM studies on domain structure in PbTiO3 thin film show that the domain density depends on the grain size and indirectly on the film thickness. The mobility of domain walls (DWs) has been investigated by in situ TEM and mechanical dissipation techniques, and its contribution to the permittivity (ε) and coercive field (Ec) was analyzed. The weak pinning of DWs in SrBi2Ta2O9 (SBT) was further confirmed by experimental results of the voltage and frequency dependence of the fatigue as well as retention.

AB - TEM studies on domain structure in PbTiO3 thin film show that the domain density depends on the grain size and indirectly on the film thickness. The mobility of domain walls (DWs) has been investigated by in situ TEM and mechanical dissipation techniques, and its contribution to the permittivity (ε) and coercive field (Ec) was analyzed. The weak pinning of DWs in SrBi2Ta2O9 (SBT) was further confirmed by experimental results of the voltage and frequency dependence of the fatigue as well as retention.

UR - https://www.scopus.com/pages/publications/0002834422

M3 - 会议文章

AN - SCOPUS:0002834422

SN - 0015-0193

VL - 231

SP - 589/1 - 598/10

JO - Ferroelectrics

JF - Ferroelectrics

IS - 1 -4 pt 3

T2 - Proceedings of the 1998 2nd Asian Meeting on Ferrroelectricity (AMF-2)

Y2 - 7 December 1998 through 11 December 1998

ER -

Domain structure, domain wall mobility and electric properties for PbTiO₃ and SrBi₂Ta₂O₉ thin film

Abstract

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