Dislocation-induced IR absorption and photoluminescence emission in Cd0.96Zn0.04Te

Gangqiang Zha; Wanqi Jie; Tingting Tan; Linghang Wang; Dongmei Zeng

doi:10.1016/j.msea.2006.06.079

Dislocation-induced IR absorption and photoluminescence emission in Cd_0.96Zn_0.04Te

Gangqiang Zha
, Wanqi Jie
, Tingting Tan
, Linghang Wang
, Dongmei Zeng

Northwestern Polytechnical University Xian

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Dislocations were introduced into CdZnTe wafers by the means of bending deformation at an elevated temperature. The average IR transmittance of CdZnTe wafers was found to be decreased to 44% after deformation from 64% before. The polarization absorption of dangling-bond electrons in dislocations should be responsible for the decrease of IR transmittance. In photoluminescence measurement, the shallow donor-acceptor pair transition peak at 1.557 eV and its first longitudinal optical phonon replica were detected in CdZnTe after deformation. In defect-related region, a new band D_complex located at 1.508 eV appeared, which should be attributed to defect levels introduced by dislocations.

Original language	English
Pages (from-to)	126-128
Number of pages	3
Journal	Materials Science and Engineering: A
Volume	432
Issue number	1-2
DOIs	https://doi.org/10.1016/j.msea.2006.06.079
State	Published - 25 Sep 2006
Externally published	Yes

Keywords

CdZnTe
Dislocations
IR transmittance
PL

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10.1016/j.msea.2006.06.079

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title = "Dislocation-induced IR absorption and photoluminescence emission in Cd0.96Zn0.04Te",

abstract = "Dislocations were introduced into CdZnTe wafers by the means of bending deformation at an elevated temperature. The average IR transmittance of CdZnTe wafers was found to be decreased to 44\% after deformation from 64\% before. The polarization absorption of dangling-bond electrons in dislocations should be responsible for the decrease of IR transmittance. In photoluminescence measurement, the shallow donor-acceptor pair transition peak at 1.557 eV and its first longitudinal optical phonon replica were detected in CdZnTe after deformation. In defect-related region, a new band Dcomplex located at 1.508 eV appeared, which should be attributed to defect levels introduced by dislocations.",

keywords = "CdZnTe, Dislocations, IR transmittance, PL",

author = "Gangqiang Zha and Wanqi Jie and Tingting Tan and Linghang Wang and Dongmei Zeng",

year = "2006",

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day = "25",

doi = "10.1016/j.msea.2006.06.079",

language = "英语",

volume = "432",

pages = "126--128",

journal = "Materials Science and Engineering: A",

issn = "0921-5093",

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T1 - Dislocation-induced IR absorption and photoluminescence emission in Cd0.96Zn0.04Te

AU - Zha, Gangqiang

AU - Jie, Wanqi

AU - Tan, Tingting

AU - Wang, Linghang

AU - Zeng, Dongmei

PY - 2006/9/25

Y1 - 2006/9/25

N2 - Dislocations were introduced into CdZnTe wafers by the means of bending deformation at an elevated temperature. The average IR transmittance of CdZnTe wafers was found to be decreased to 44% after deformation from 64% before. The polarization absorption of dangling-bond electrons in dislocations should be responsible for the decrease of IR transmittance. In photoluminescence measurement, the shallow donor-acceptor pair transition peak at 1.557 eV and its first longitudinal optical phonon replica were detected in CdZnTe after deformation. In defect-related region, a new band Dcomplex located at 1.508 eV appeared, which should be attributed to defect levels introduced by dislocations.

AB - Dislocations were introduced into CdZnTe wafers by the means of bending deformation at an elevated temperature. The average IR transmittance of CdZnTe wafers was found to be decreased to 44% after deformation from 64% before. The polarization absorption of dangling-bond electrons in dislocations should be responsible for the decrease of IR transmittance. In photoluminescence measurement, the shallow donor-acceptor pair transition peak at 1.557 eV and its first longitudinal optical phonon replica were detected in CdZnTe after deformation. In defect-related region, a new band Dcomplex located at 1.508 eV appeared, which should be attributed to defect levels introduced by dislocations.

KW - CdZnTe

KW - Dislocations

KW - IR transmittance

KW - PL

UR - https://www.scopus.com/pages/publications/33747788351

U2 - 10.1016/j.msea.2006.06.079

DO - 10.1016/j.msea.2006.06.079

M3 - 文章

AN - SCOPUS:33747788351

SN - 0921-5093

VL - 432

SP - 126

EP - 128

JO - Materials Science and Engineering: A

JF - Materials Science and Engineering: A

IS - 1-2

ER -

Dislocation-induced IR absorption and photoluminescence emission in Cd_0.96Zn_0.04Te

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Keywords

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