Directly Coupled Hydrogenated Diamond FET Logic Circuit with High Voltage Gain

Yuesong Liang; Wei Wang; Fang Lin; Tianlin Niu; Genqiang Chen; Fei Wang; Qi Li; Shi He; Minghui Zhang; Yanfeng Wang; Feng Wen; Hong Xing Wang

doi:10.1109/LED.2024.3448363

Directly Coupled Hydrogenated Diamond FET Logic Circuit with High Voltage Gain

Yuesong Liang
, Wei Wang
, Fang Lin
, Tianlin Niu
, Genqiang Chen
, Fei Wang
, Qi Li
, Shi He
, Minghui Zhang
, Yanfeng Wang
, Feng Wen
, Hong Xing Wang

Faculty of Electronic and Information Engineering

Xi'an Jiaotong University

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The directly coupled hydrogen-terminated diamond FET logic (DCHDFL) circuit is fabricated. The E-mode and D-mode FETs are assigned as driver and load devices of the DCHDFL circuit to achieve inversion characteristics. The E-mode FET showcases high I_DSmax of 53.3mA/mm, V_TH of -0.8 V, low SS of 98 mV/dec and on/off ratio of 10⁹, which enable input/output logic level matching with a low drive/load ratio of 1.0. The peak gain of circuit increases from 12.57 to 36.3 V/V with V_DD ranging from -5 V to -25 V, which is the highest gain achieved of diamond inverters, due to the high on/off ratio and low SS of E-mode FET. This circuit exhibits proper functions up to 200 °C, demonstrating a good thermal stability. These results indicate the great potential and possibilities for diamond smart power integrated circuit application.

Original language	English
Pages (from-to)	1698-1701
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	45
Issue number	10
DOIs	https://doi.org/10.1109/LED.2024.3448363
State	Published - 2024

Keywords

Diamond
directly coupled hydrogen terminated diamond FET logic (DCHDFL)
high gain
high-temperature
inverter

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10.1109/LED.2024.3448363

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@article{23b0824dacf24d2392e58ede2c3e6f59,

title = "Directly Coupled Hydrogenated Diamond FET Logic Circuit with High Voltage Gain",

abstract = "The directly coupled hydrogen-terminated diamond FET logic (DCHDFL) circuit is fabricated. The E-mode and D-mode FETs are assigned as driver and load devices of the DCHDFL circuit to achieve inversion characteristics. The E-mode FET showcases high IDSmax of 53.3mA/mm, VTH of -0.8 V, low SS of 98 mV/dec and on/off ratio of 109, which enable input/output logic level matching with a low drive/load ratio of 1.0. The peak gain of circuit increases from 12.57 to 36.3 V/V with VDD ranging from -5 V to -25 V, which is the highest gain achieved of diamond inverters, due to the high on/off ratio and low SS of E-mode FET. This circuit exhibits proper functions up to 200 °C, demonstrating a good thermal stability. These results indicate the great potential and possibilities for diamond smart power integrated circuit application.",

keywords = "Diamond, directly coupled hydrogen terminated diamond FET logic (DCHDFL), high gain, high-temperature, inverter",

author = "Yuesong Liang and Wei Wang and Fang Lin and Tianlin Niu and Genqiang Chen and Fei Wang and Qi Li and Shi He and Minghui Zhang and Yanfeng Wang and Feng Wen and Wang, \{Hong Xing\}",

note = "Publisher Copyright: {\textcopyright} 2024 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission.",

year = "2024",

doi = "10.1109/LED.2024.3448363",

language = "英语",

volume = "45",

pages = "1698--1701",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "10",

}

TY - JOUR

T1 - Directly Coupled Hydrogenated Diamond FET Logic Circuit with High Voltage Gain

AU - Liang, Yuesong

AU - Wang, Wei

AU - Lin, Fang

AU - Niu, Tianlin

AU - Chen, Genqiang

AU - Wang, Fei

AU - Li, Qi

AU - He, Shi

AU - Zhang, Minghui

AU - Wang, Yanfeng

AU - Wen, Feng

AU - Wang, Hong Xing

PY - 2024

Y1 - 2024

N2 - The directly coupled hydrogen-terminated diamond FET logic (DCHDFL) circuit is fabricated. The E-mode and D-mode FETs are assigned as driver and load devices of the DCHDFL circuit to achieve inversion characteristics. The E-mode FET showcases high IDSmax of 53.3mA/mm, VTH of -0.8 V, low SS of 98 mV/dec and on/off ratio of 109, which enable input/output logic level matching with a low drive/load ratio of 1.0. The peak gain of circuit increases from 12.57 to 36.3 V/V with VDD ranging from -5 V to -25 V, which is the highest gain achieved of diamond inverters, due to the high on/off ratio and low SS of E-mode FET. This circuit exhibits proper functions up to 200 °C, demonstrating a good thermal stability. These results indicate the great potential and possibilities for diamond smart power integrated circuit application.

AB - The directly coupled hydrogen-terminated diamond FET logic (DCHDFL) circuit is fabricated. The E-mode and D-mode FETs are assigned as driver and load devices of the DCHDFL circuit to achieve inversion characteristics. The E-mode FET showcases high IDSmax of 53.3mA/mm, VTH of -0.8 V, low SS of 98 mV/dec and on/off ratio of 109, which enable input/output logic level matching with a low drive/load ratio of 1.0. The peak gain of circuit increases from 12.57 to 36.3 V/V with VDD ranging from -5 V to -25 V, which is the highest gain achieved of diamond inverters, due to the high on/off ratio and low SS of E-mode FET. This circuit exhibits proper functions up to 200 °C, demonstrating a good thermal stability. These results indicate the great potential and possibilities for diamond smart power integrated circuit application.

KW - Diamond

KW - directly coupled hydrogen terminated diamond FET logic (DCHDFL)

KW - high gain

KW - high-temperature

KW - inverter

UR - https://www.scopus.com/pages/publications/85201764980

U2 - 10.1109/LED.2024.3448363

DO - 10.1109/LED.2024.3448363

M3 - 文章

AN - SCOPUS:85201764980

SN - 0741-3106

VL - 45

SP - 1698

EP - 1701

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 10

ER -

Directly Coupled Hydrogenated Diamond FET Logic Circuit with High Voltage Gain

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Keywords

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