Direct imprint of Al foil for metallization of high-aspect ratio Al lines in nano/micro patterned SiO2/Si

Sung Won Youn; Akihisa Ueno; Chikeo Okuyama; Hideki Takagi; Masaharu Takahashi; Ryutaro Maeda

doi:10.1016/j.mee.2008.11.014

Direct imprint of Al foil for metallization of high-aspect ratio Al lines in nano/micro patterned SiO₂/Si

Sung Won Youn
, Akihisa Ueno
, Chikeo Okuyama
, Hideki Takagi
, Masaharu Takahashi
, Ryutaro Maeda

National Institute of Advanced Industrial Science and Technology

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Patterning techniques of Al micro/nano-structures become more and more critical as optical components and microelectronic devices continue to be scaled down. In this work, we fabricated gap-filled Al lines in SiO₂/Si masters by using the direct thermal imprint of molten Al. As a result, gap-filled Al lines with width ranging from 0.25 to 20 μm and depth ranging from 6 to 127 μm could be achieved without any further processing step such as CVD and PVD. The process studied here has shown the possibility to extend trench filling capability to 0.25 μm structures with 24:1 aspect ratio, which are difficult to be obtained by other conventional Al metallization methods.

Original language	English
Pages (from-to)	600-603
Number of pages	4
Journal	Microelectronic Engineering
Volume	86
Issue number	4-6
DOIs	https://doi.org/10.1016/j.mee.2008.11.014
State	Published - Apr 2009
Externally published	Yes

Keywords

Aluminum
Filling process
High-aspect ratio
Micro/nano-structures
Thermal-imprint lithography

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10.1016/j.mee.2008.11.014

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title = "Direct imprint of Al foil for metallization of high-aspect ratio Al lines in nano/micro patterned SiO2/Si",

abstract = "Patterning techniques of Al micro/nano-structures become more and more critical as optical components and microelectronic devices continue to be scaled down. In this work, we fabricated gap-filled Al lines in SiO2/Si masters by using the direct thermal imprint of molten Al. As a result, gap-filled Al lines with width ranging from 0.25 to 20 μm and depth ranging from 6 to 127 μm could be achieved without any further processing step such as CVD and PVD. The process studied here has shown the possibility to extend trench filling capability to 0.25 μm structures with 24:1 aspect ratio, which are difficult to be obtained by other conventional Al metallization methods.",

keywords = "Aluminum, Filling process, High-aspect ratio, Micro/nano-structures, Thermal-imprint lithography",

author = "Youn, \{Sung Won\} and Akihisa Ueno and Chikeo Okuyama and Hideki Takagi and Masaharu Takahashi and Ryutaro Maeda",

year = "2009",

month = apr,

doi = "10.1016/j.mee.2008.11.014",

language = "英语",

volume = "86",

pages = "600--603",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

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}

TY - JOUR

T1 - Direct imprint of Al foil for metallization of high-aspect ratio Al lines in nano/micro patterned SiO2/Si

AU - Youn, Sung Won

AU - Ueno, Akihisa

AU - Okuyama, Chikeo

AU - Takagi, Hideki

AU - Takahashi, Masaharu

AU - Maeda, Ryutaro

PY - 2009/4

Y1 - 2009/4

N2 - Patterning techniques of Al micro/nano-structures become more and more critical as optical components and microelectronic devices continue to be scaled down. In this work, we fabricated gap-filled Al lines in SiO2/Si masters by using the direct thermal imprint of molten Al. As a result, gap-filled Al lines with width ranging from 0.25 to 20 μm and depth ranging from 6 to 127 μm could be achieved without any further processing step such as CVD and PVD. The process studied here has shown the possibility to extend trench filling capability to 0.25 μm structures with 24:1 aspect ratio, which are difficult to be obtained by other conventional Al metallization methods.

AB - Patterning techniques of Al micro/nano-structures become more and more critical as optical components and microelectronic devices continue to be scaled down. In this work, we fabricated gap-filled Al lines in SiO2/Si masters by using the direct thermal imprint of molten Al. As a result, gap-filled Al lines with width ranging from 0.25 to 20 μm and depth ranging from 6 to 127 μm could be achieved without any further processing step such as CVD and PVD. The process studied here has shown the possibility to extend trench filling capability to 0.25 μm structures with 24:1 aspect ratio, which are difficult to be obtained by other conventional Al metallization methods.

KW - Aluminum

KW - Filling process

KW - High-aspect ratio

KW - Micro/nano-structures

KW - Thermal-imprint lithography

UR - https://www.scopus.com/pages/publications/67349144422

U2 - 10.1016/j.mee.2008.11.014

DO - 10.1016/j.mee.2008.11.014

M3 - 文章

AN - SCOPUS:67349144422

SN - 0167-9317

VL - 86

SP - 600

EP - 603

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 4-6

ER -

Direct imprint of Al foil for metallization of high-aspect ratio Al lines in nano/micro patterned SiO₂/Si

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Keywords

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