Direct epitaxial growth of SrTiO3 on Si (001): Interface, crystallization and IR evidence of phase transition

G. Niu; W. W. Peng; G. Saint-Girons; J. Penuelas; P. Roy; J. B. Brubach; J. L. Maurice; G. Hollinger; B. Vilquin

doi:10.1016/j.tsf.2010.12.208

Direct epitaxial growth of SrTiO₃ on Si (001): Interface, crystallization and IR evidence of phase transition

G. Niu
, W. W. Peng
, G. Saint-Girons
, J. Penuelas
, P. Roy
, J. B. Brubach
, J. L. Maurice
, G. Hollinger
, B. Vilquin

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

The work reports the direct epitaxial growth of SrTiO₃ on Si (001) substrate by molecular beam epitaxy. The impact of the growth temperature and the initial oxygen partial pressure on the heteroepitaxy is studied in detail using different in-situ and ex-situ characterization methods. The optimal growth condition has been identified as 360 °C with the initial oxygen partial pressure of 5 × 10^{- 8} Torr to achieve a high-quality single crystalline SrTiO₃ film and a coherent interface between SrTiO₃ and Si. The THz Infrared (IR) measurements show that the biaxial strained SrTiO₃ commensurately grown on silicon undergoes a cubic-tetragonal phase transition.

Original language	English
Pages (from-to)	5722-5725
Number of pages	4
Journal	Thin Solid Films
Volume	519
Issue number	17
DOIs	https://doi.org/10.1016/j.tsf.2010.12.208
State	Published - 30 Jun 2011
Externally published	Yes

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10.1016/j.tsf.2010.12.208

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title = "Direct epitaxial growth of SrTiO3 on Si (001): Interface, crystallization and IR evidence of phase transition",

abstract = "The work reports the direct epitaxial growth of SrTiO3 on Si (001) substrate by molecular beam epitaxy. The impact of the growth temperature and the initial oxygen partial pressure on the heteroepitaxy is studied in detail using different in-situ and ex-situ characterization methods. The optimal growth condition has been identified as 360 °C with the initial oxygen partial pressure of 5 × 10- 8 Torr to achieve a high-quality single crystalline SrTiO3 film and a coherent interface between SrTiO3 and Si. The THz Infrared (IR) measurements show that the biaxial strained SrTiO3 commensurately grown on silicon undergoes a cubic-tetragonal phase transition.",

author = "G. Niu and Peng, \{W. W.\} and G. Saint-Girons and J. Penuelas and P. Roy and Brubach, \{J. B.\} and Maurice, \{J. L.\} and G. Hollinger and B. Vilquin",

year = "2011",

month = jun,

day = "30",

doi = "10.1016/j.tsf.2010.12.208",

language = "英语",

volume = "519",

pages = "5722--5725",

journal = "Thin Solid Films",

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publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Direct epitaxial growth of SrTiO3 on Si (001)

T2 - Interface, crystallization and IR evidence of phase transition

AU - Niu, G.

AU - Peng, W. W.

AU - Saint-Girons, G.

AU - Penuelas, J.

AU - Roy, P.

AU - Brubach, J. B.

AU - Maurice, J. L.

AU - Hollinger, G.

AU - Vilquin, B.

PY - 2011/6/30

Y1 - 2011/6/30

N2 - The work reports the direct epitaxial growth of SrTiO3 on Si (001) substrate by molecular beam epitaxy. The impact of the growth temperature and the initial oxygen partial pressure on the heteroepitaxy is studied in detail using different in-situ and ex-situ characterization methods. The optimal growth condition has been identified as 360 °C with the initial oxygen partial pressure of 5 × 10- 8 Torr to achieve a high-quality single crystalline SrTiO3 film and a coherent interface between SrTiO3 and Si. The THz Infrared (IR) measurements show that the biaxial strained SrTiO3 commensurately grown on silicon undergoes a cubic-tetragonal phase transition.

AB - The work reports the direct epitaxial growth of SrTiO3 on Si (001) substrate by molecular beam epitaxy. The impact of the growth temperature and the initial oxygen partial pressure on the heteroepitaxy is studied in detail using different in-situ and ex-situ characterization methods. The optimal growth condition has been identified as 360 °C with the initial oxygen partial pressure of 5 × 10- 8 Torr to achieve a high-quality single crystalline SrTiO3 film and a coherent interface between SrTiO3 and Si. The THz Infrared (IR) measurements show that the biaxial strained SrTiO3 commensurately grown on silicon undergoes a cubic-tetragonal phase transition.

UR - https://www.scopus.com/pages/publications/79957999912

U2 - 10.1016/j.tsf.2010.12.208

DO - 10.1016/j.tsf.2010.12.208

M3 - 文章

AN - SCOPUS:79957999912

SN - 0040-6090

VL - 519

SP - 5722

EP - 5725

JO - Thin Solid Films

JF - Thin Solid Films

IS - 17

ER -

Direct epitaxial growth of SrTiO₃ on Si (001): Interface, crystallization and IR evidence of phase transition

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