Dielectric properties of CaCu3Ti4O12 thick films

Hui Wang; Shengtao Li; Chunjiang Lin; Jianying Li; Mingzhe Rong

doi:10.1109/ICPADM.2012.6319018

Dielectric properties of CaCu₃Ti₄O₁₂ thick films

Hui Wang
, Shengtao Li
, Chunjiang Lin
, Jianying Li
, Mingzhe Rong

School of Electrical Engineering

Xi'an Jiaotong University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

CaCu₃Ti₄O₁₂ is believed to have a variety of potential applications due to its unusual high dielectric constant and very high thermal stability. Ceramic films of CaCu₃Ti₄O ₁₂ differ from bulk specimens in dielectric and other physical properties. In this paper, the dielectric properties of CCTO thick films are investigated by SEM and dielectric spectra analysis. The difference thicknesses (0.1 mm, 0.2 mm, 0.3 mm) of thick films formed by the rolling-film method, and the permittivity of the thick film is almost the same value as the same-based CCTO bulk. It is found that the orientation of grain grown, the average particle size and thickness can significantly influence the dielectric properties of CCTO thick films.

Original language	English
Title of host publication	ICPADM 2012 - 2012 IEEE 10th International Conference on the Properties and Applications of Dielectric Materials, Technical Papers
DOIs	https://doi.org/10.1109/ICPADM.2012.6319018
State	Published - 2012
Event	2012 IEEE 10th International Conference on the Properties and Applications of Dielectric Materials, ICPADM 2012 - Bangalore, India Duration: 24 Jul 2012 → 28 Jul 2012

Publication series

Name	Proceedings of the IEEE International Conference on Properties and Applications of Dielectric Materials

Conference

Conference	2012 IEEE 10th International Conference on the Properties and Applications of Dielectric Materials, ICPADM 2012
Country/Territory	India
City	Bangalore
Period	24/07/12 → 28/07/12

Keywords

CaCuTiO ceramics
dielectric properties
giant permittivity
thick film

Access to Document

10.1109/ICPADM.2012.6319018

Cite this

Wang, H., Li, S., Lin, C., Li, J., & Rong, M. (2012). Dielectric properties of CaCu₃Ti₄O₁₂ thick films. In ICPADM 2012 - 2012 IEEE 10th International Conference on the Properties and Applications of Dielectric Materials, Technical Papers Article 6319018 (Proceedings of the IEEE International Conference on Properties and Applications of Dielectric Materials). https://doi.org/10.1109/ICPADM.2012.6319018

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title = "Dielectric properties of CaCu3Ti4O12 thick films",

abstract = "CaCu3Ti4O12 is believed to have a variety of potential applications due to its unusual high dielectric constant and very high thermal stability. Ceramic films of CaCu3Ti4O 12 differ from bulk specimens in dielectric and other physical properties. In this paper, the dielectric properties of CCTO thick films are investigated by SEM and dielectric spectra analysis. The difference thicknesses (0.1 mm, 0.2 mm, 0.3 mm) of thick films formed by the rolling-film method, and the permittivity of the thick film is almost the same value as the same-based CCTO bulk. It is found that the orientation of grain grown, the average particle size and thickness can significantly influence the dielectric properties of CCTO thick films.",

keywords = "CaCuTiO ceramics, dielectric properties, giant permittivity, thick film",

author = "Hui Wang and Shengtao Li and Chunjiang Lin and Jianying Li and Mingzhe Rong",

year = "2012",

doi = "10.1109/ICPADM.2012.6319018",

language = "英语",

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booktitle = "ICPADM 2012 - 2012 IEEE 10th International Conference on the Properties and Applications of Dielectric Materials, Technical Papers",

note = "2012 IEEE 10th International Conference on the Properties and Applications of Dielectric Materials, ICPADM 2012 ; Conference date: 24-07-2012 Through 28-07-2012",

}

Wang, H, Li, S, Lin, C, Li, J & Rong, M 2012, Dielectric properties of CaCu₃Ti₄O₁₂ thick films. in ICPADM 2012 - 2012 IEEE 10th International Conference on the Properties and Applications of Dielectric Materials, Technical Papers., 6319018, Proceedings of the IEEE International Conference on Properties and Applications of Dielectric Materials, 2012 IEEE 10th International Conference on the Properties and Applications of Dielectric Materials, ICPADM 2012, Bangalore, India, 24/07/12. https://doi.org/10.1109/ICPADM.2012.6319018

Dielectric properties of CaCu₃Ti₄O₁₂ thick films. / Wang, Hui; Li, Shengtao; Lin, Chunjiang et al.
ICPADM 2012 - 2012 IEEE 10th International Conference on the Properties and Applications of Dielectric Materials, Technical Papers. 2012. 6319018 (Proceedings of the IEEE International Conference on Properties and Applications of Dielectric Materials).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Dielectric properties of CaCu3Ti4O12 thick films

AU - Wang, Hui

AU - Li, Shengtao

AU - Lin, Chunjiang

AU - Li, Jianying

AU - Rong, Mingzhe

PY - 2012

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N2 - CaCu3Ti4O12 is believed to have a variety of potential applications due to its unusual high dielectric constant and very high thermal stability. Ceramic films of CaCu3Ti4O 12 differ from bulk specimens in dielectric and other physical properties. In this paper, the dielectric properties of CCTO thick films are investigated by SEM and dielectric spectra analysis. The difference thicknesses (0.1 mm, 0.2 mm, 0.3 mm) of thick films formed by the rolling-film method, and the permittivity of the thick film is almost the same value as the same-based CCTO bulk. It is found that the orientation of grain grown, the average particle size and thickness can significantly influence the dielectric properties of CCTO thick films.

AB - CaCu3Ti4O12 is believed to have a variety of potential applications due to its unusual high dielectric constant and very high thermal stability. Ceramic films of CaCu3Ti4O 12 differ from bulk specimens in dielectric and other physical properties. In this paper, the dielectric properties of CCTO thick films are investigated by SEM and dielectric spectra analysis. The difference thicknesses (0.1 mm, 0.2 mm, 0.3 mm) of thick films formed by the rolling-film method, and the permittivity of the thick film is almost the same value as the same-based CCTO bulk. It is found that the orientation of grain grown, the average particle size and thickness can significantly influence the dielectric properties of CCTO thick films.

KW - CaCuTiO ceramics

KW - dielectric properties

KW - giant permittivity

KW - thick film

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Wang H, Li S, Lin C, Li J , Rong M. Dielectric properties of CaCu₃Ti₄O₁₂ thick films. In ICPADM 2012 - 2012 IEEE 10th International Conference on the Properties and Applications of Dielectric Materials, Technical Papers. 2012. 6319018. (Proceedings of the IEEE International Conference on Properties and Applications of Dielectric Materials). doi: 10.1109/ICPADM.2012.6319018