Dielectric nonlinearity analysis of BNT-ST-BT relaxor ferroelectric thin films with different film thicknesses

Jinyan Zhao; Zhe Wang; Yizhuo Li; Kun Zheng; Jie Zhang; Haoyan Meng; Nan Zhang; Yulong Zhao; Gang Niu; Wei Ren

doi:10.1063/5.0231329

Dielectric nonlinearity analysis of BNT-ST-BT relaxor ferroelectric thin films with different film thicknesses

Jinyan Zhao
, Zhe Wang
, Yizhuo Li
, Kun Zheng
, Jie Zhang
, Haoyan Meng
, Nan Zhang
, Yulong Zhao
, Gang Niu
, Wei Ren

Liaocheng University
Xi'an Jiaotong University

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Thickness-dependent dielectric nonlinear properties of 0.78Bi_0.5Na_0.5TiO₃-0.2SrTiO₃-0.02BaTiO₃ thin films in a thickness range of 0.62-1.62 μm were investigated in this work. It was demonstrated that the dielectric properties decreased with the decrease in thickness due to the substrate clamping inducing the degeneration of intrinsic contribution and the reduced domain wall mobility. A low DC electric field promoted domain switching and reversible domain wall motion. The domain mobility was suppressed by a high DC electric field, which resulted in reduced dielectric permittivity combined with the tunability of intrinsic dielectric response.

Original language	English
Article number	224103
Journal	Journal of Applied Physics
Volume	136
Issue number	22
DOIs	https://doi.org/10.1063/5.0231329
State	Published - 14 Dec 2024

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10.1063/5.0231329

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@article{57288c00a02f453f90092e08319084b2,

title = "Dielectric nonlinearity analysis of BNT-ST-BT relaxor ferroelectric thin films with different film thicknesses",

abstract = "Thickness-dependent dielectric nonlinear properties of 0.78Bi0.5Na0.5TiO3-0.2SrTiO3-0.02BaTiO3 thin films in a thickness range of 0.62-1.62 μm were investigated in this work. It was demonstrated that the dielectric properties decreased with the decrease in thickness due to the substrate clamping inducing the degeneration of intrinsic contribution and the reduced domain wall mobility. A low DC electric field promoted domain switching and reversible domain wall motion. The domain mobility was suppressed by a high DC electric field, which resulted in reduced dielectric permittivity combined with the tunability of intrinsic dielectric response.",

author = "Jinyan Zhao and Zhe Wang and Yizhuo Li and Kun Zheng and Jie Zhang and Haoyan Meng and Nan Zhang and Yulong Zhao and Gang Niu and Wei Ren",

note = "Publisher Copyright: {\textcopyright} 2024 Author(s).",

year = "2024",

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doi = "10.1063/5.0231329",

language = "英语",

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T1 - Dielectric nonlinearity analysis of BNT-ST-BT relaxor ferroelectric thin films with different film thicknesses

AU - Zhao, Jinyan

AU - Wang, Zhe

AU - Li, Yizhuo

AU - Zheng, Kun

AU - Zhang, Jie

AU - Meng, Haoyan

AU - Zhang, Nan

AU - Zhao, Yulong

AU - Niu, Gang

AU - Ren, Wei

PY - 2024/12/14

Y1 - 2024/12/14

N2 - Thickness-dependent dielectric nonlinear properties of 0.78Bi0.5Na0.5TiO3-0.2SrTiO3-0.02BaTiO3 thin films in a thickness range of 0.62-1.62 μm were investigated in this work. It was demonstrated that the dielectric properties decreased with the decrease in thickness due to the substrate clamping inducing the degeneration of intrinsic contribution and the reduced domain wall mobility. A low DC electric field promoted domain switching and reversible domain wall motion. The domain mobility was suppressed by a high DC electric field, which resulted in reduced dielectric permittivity combined with the tunability of intrinsic dielectric response.

AB - Thickness-dependent dielectric nonlinear properties of 0.78Bi0.5Na0.5TiO3-0.2SrTiO3-0.02BaTiO3 thin films in a thickness range of 0.62-1.62 μm were investigated in this work. It was demonstrated that the dielectric properties decreased with the decrease in thickness due to the substrate clamping inducing the degeneration of intrinsic contribution and the reduced domain wall mobility. A low DC electric field promoted domain switching and reversible domain wall motion. The domain mobility was suppressed by a high DC electric field, which resulted in reduced dielectric permittivity combined with the tunability of intrinsic dielectric response.

UR - https://www.scopus.com/pages/publications/85211969407

U2 - 10.1063/5.0231329

DO - 10.1063/5.0231329

M3 - 文章

AN - SCOPUS:85211969407

SN - 0021-8979

VL - 136

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 22

M1 - 224103

ER -

Dielectric nonlinearity analysis of BNT-ST-BT relaxor ferroelectric thin films with different film thicknesses

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