Dielectric audio-frequency dispersion in Ba(Ti1 - x Snx)O3 ferroelectrics

Xiaoli Wang; Bo Li

doi:10.1016/j.ssc.2009.01.006

Dielectric audio-frequency dispersion in Ba(Ti_{1 - x} Sn_x)O₃ ferroelectrics

Xiaoli Wang
, Bo Li

School of Mechanical Engineering

Xi'an Jiaotong University

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

Dielectric audio-frequency dispersion behavior exists in both BaTiO₃ ferroelectric and Ba(Ti_1-xSn_x)O₃ relaxors. It is suggested that defect dipoles trapped by random electric fields E_r are the origin of the dielectric audio-frequency dispersion. E_r originates from ferroelectric domains and polar regions, and becomes weaker as temperature increases. Consequently, defect dipoles are being continually released from trapped states to take part in the dielectric response under an applied ac field with increasing temperature. The temperature T_m of maximum permittivity ε_m for Ba(Ti_1-xSn_x)O₃ ceramics becomes frequency-dependent when the permittivity contributed by defect dipoles is large enough.

Original language	English
Pages (from-to)	537-539
Number of pages	3
Journal	Solid State Communications
Volume	149
Issue number	13-14
DOIs	https://doi.org/10.1016/j.ssc.2009.01.006
State	Published - Apr 2009

Keywords

A. Ferroelectrics
D. Dielectric response
D. Phase transition

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10.1016/j.ssc.2009.01.006

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title = "Dielectric audio-frequency dispersion in Ba(Ti1 - x Snx)O3 ferroelectrics",

abstract = "Dielectric audio-frequency dispersion behavior exists in both BaTiO3 ferroelectric and Ba(Ti1-xSnx)O3 relaxors. It is suggested that defect dipoles trapped by random electric fields Er are the origin of the dielectric audio-frequency dispersion. Er originates from ferroelectric domains and polar regions, and becomes weaker as temperature increases. Consequently, defect dipoles are being continually released from trapped states to take part in the dielectric response under an applied ac field with increasing temperature. The temperature Tm of maximum permittivity εm for Ba(Ti1-xSnx)O3 ceramics becomes frequency-dependent when the permittivity contributed by defect dipoles is large enough.",

keywords = "A. Ferroelectrics, D. Dielectric response, D. Phase transition",

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volume = "149",

pages = "537--539",

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T1 - Dielectric audio-frequency dispersion in Ba(Ti1 - x Snx)O3 ferroelectrics

AU - Wang, Xiaoli

AU - Li, Bo

PY - 2009/4

Y1 - 2009/4

N2 - Dielectric audio-frequency dispersion behavior exists in both BaTiO3 ferroelectric and Ba(Ti1-xSnx)O3 relaxors. It is suggested that defect dipoles trapped by random electric fields Er are the origin of the dielectric audio-frequency dispersion. Er originates from ferroelectric domains and polar regions, and becomes weaker as temperature increases. Consequently, defect dipoles are being continually released from trapped states to take part in the dielectric response under an applied ac field with increasing temperature. The temperature Tm of maximum permittivity εm for Ba(Ti1-xSnx)O3 ceramics becomes frequency-dependent when the permittivity contributed by defect dipoles is large enough.

AB - Dielectric audio-frequency dispersion behavior exists in both BaTiO3 ferroelectric and Ba(Ti1-xSnx)O3 relaxors. It is suggested that defect dipoles trapped by random electric fields Er are the origin of the dielectric audio-frequency dispersion. Er originates from ferroelectric domains and polar regions, and becomes weaker as temperature increases. Consequently, defect dipoles are being continually released from trapped states to take part in the dielectric response under an applied ac field with increasing temperature. The temperature Tm of maximum permittivity εm for Ba(Ti1-xSnx)O3 ceramics becomes frequency-dependent when the permittivity contributed by defect dipoles is large enough.

KW - A. Ferroelectrics

KW - D. Dielectric response

KW - D. Phase transition

UR - https://www.scopus.com/pages/publications/59649103049

U2 - 10.1016/j.ssc.2009.01.006

DO - 10.1016/j.ssc.2009.01.006

M3 - 文章

AN - SCOPUS:59649103049

SN - 0038-1098

VL - 149

SP - 537

EP - 539

JO - Solid State Communications

JF - Solid State Communications

IS - 13-14

ER -

Dielectric audio-frequency dispersion in Ba(Ti_{1 - x} Sn_x)O₃ ferroelectrics

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Keywords

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