Diamond based field-effect transistors of Zr gate with sinx dielectric layers

W. Wang; C. Hu; S. Y. Li; F. N. Li; Z. C. Liu; F. Wang; J. Fu; H. X. Wang

doi:10.1155/2015/124640

Diamond based field-effect transistors of Zr gate with sinx dielectric layers

W. Wang
, C. Hu
, S. Y. Li
, F. N. Li
, Z. C. Liu
, F. Wang
, J. Fu
, H. X. Wang

Faculty of Electronic and Information Engineering

Xi'an Jiaotong University

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

Investigation of Zr-gate diamond field-effect transistor with SiNx dielectric layers (SD-FET) has been carried out. SD-FET works in normally on depletion mode with p-type channel, whose sheet carrier density and hole mobility are evaluated to be 2.17 × 10¹³ cm^-2 and 24.4 cm²·V^-1·s^-1, respectively. The output and transfer properties indicate the preservation of conduction channel because of the SiNx dielectric layer, which may be explained by the interface bond of C-N. High voltage up to -200 V is applied to the device, and no breakdown is observed. For comparison, another traditional surface channel FET (SC-FET) is also fabricated.

Original language	English
Article number	124640
Journal	Journal of Nanomaterials
Volume	2015
DOIs	https://doi.org/10.1155/2015/124640
State	Published - 2015

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title = "Diamond based field-effect transistors of Zr gate with sinx dielectric layers",

abstract = "Investigation of Zr-gate diamond field-effect transistor with SiNx dielectric layers (SD-FET) has been carried out. SD-FET works in normally on depletion mode with p-type channel, whose sheet carrier density and hole mobility are evaluated to be 2.17 × 1013 cm-2 and 24.4 cm2·V-1·s-1, respectively. The output and transfer properties indicate the preservation of conduction channel because of the SiNx dielectric layer, which may be explained by the interface bond of C-N. High voltage up to -200 V is applied to the device, and no breakdown is observed. For comparison, another traditional surface channel FET (SC-FET) is also fabricated.",

author = "W. Wang and C. Hu and Li, \{S. Y.\} and Li, \{F. N.\} and Liu, \{Z. C.\} and F. Wang and J. Fu and Wang, \{H. X.\}",

note = "Publisher Copyright: {\textcopyright} 2015 W. Wang et al.",

year = "2015",

doi = "10.1155/2015/124640",

language = "英语",

volume = "2015",

journal = "Journal of Nanomaterials",

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TY - JOUR

T1 - Diamond based field-effect transistors of Zr gate with sinx dielectric layers

AU - Wang, W.

AU - Hu, C.

AU - Li, S. Y.

AU - Li, F. N.

AU - Liu, Z. C.

AU - Wang, F.

AU - Fu, J.

AU - Wang, H. X.

PY - 2015

Y1 - 2015

N2 - Investigation of Zr-gate diamond field-effect transistor with SiNx dielectric layers (SD-FET) has been carried out. SD-FET works in normally on depletion mode with p-type channel, whose sheet carrier density and hole mobility are evaluated to be 2.17 × 1013 cm-2 and 24.4 cm2·V-1·s-1, respectively. The output and transfer properties indicate the preservation of conduction channel because of the SiNx dielectric layer, which may be explained by the interface bond of C-N. High voltage up to -200 V is applied to the device, and no breakdown is observed. For comparison, another traditional surface channel FET (SC-FET) is also fabricated.

AB - Investigation of Zr-gate diamond field-effect transistor with SiNx dielectric layers (SD-FET) has been carried out. SD-FET works in normally on depletion mode with p-type channel, whose sheet carrier density and hole mobility are evaluated to be 2.17 × 1013 cm-2 and 24.4 cm2·V-1·s-1, respectively. The output and transfer properties indicate the preservation of conduction channel because of the SiNx dielectric layer, which may be explained by the interface bond of C-N. High voltage up to -200 V is applied to the device, and no breakdown is observed. For comparison, another traditional surface channel FET (SC-FET) is also fabricated.

UR - https://www.scopus.com/pages/publications/84947740652

U2 - 10.1155/2015/124640

DO - 10.1155/2015/124640

M3 - 文章

AN - SCOPUS:84947740652

SN - 1687-4110

VL - 2015

JO - Journal of Nanomaterials

JF - Journal of Nanomaterials

M1 - 124640

ER -

Diamond based field-effect transistors of Zr gate with sinx dielectric layers

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