@inproceedings{b7576151db4e4e37b4c8816653d3a6b5,
title = "Development of a 4H-SiC Piezoresistive Pressure Sensor for High Temperature Applications",
abstract = "A piezoresistive pressure sensor based on 4H-SiC was developed for working over 500°C. The designed pressure range is 0-7MPa for special aviation applications. As demonstrated with experimental results, in this pressure range, the sensor shows excellent accuracy and repeatability from 30°C to 500°C. Compared with previous studies, in MEMS processing of the sensor chip, a suitable alloy system was determined to form a stable high-Temperature ohmic contact. Besides, the chip was packaged with mechanical structure and ceramic glue of similar thermal expansion coefficient to avoid thermal stress induced when increasing temperature. With the above measures taken, the sensor performance can be significantly improved. The design, fabrication, and package of this sensor provide support for high-Temperature use. Additionally, this work can be a reference for future research in this field.",
keywords = "4H-SiC, high temperature, piezoresistive, pressure sensor, thermal stress",
author = "Xudong Fang and Chen Wu and Xin Guo and Libo Zhao and Yulong Zhao and Zhuangde Jiang",
note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 14th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2019 ; Conference date: 11-04-2019 Through 14-04-2019",
year = "2019",
month = apr,
doi = "10.1109/NEMS.2019.8915652",
language = "英语",
series = "Proceedings of the 14th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2019",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "105--109",
booktitle = "Proceedings of the 14th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2019",
}