Abstract
A low-permittivity microwave dielectric ceramic BaZnAl10O17 (BZA) was synthesized via high-temperature solid-phase reaction. Its sintering behavior, crystal structure, and microwave dielectric properties were systematically studied. BZA can be sintered at 1575–1675 °C with uniform microstructure, εr = 8.75, Q × f = 34,783 GHz, and τf = -13.1 ppm/°C. Doping 0.5–2 wt% B2O3 reduced sintering temperature to 1500 – 1650 °C while maintaining good performance (εr = 8.39, Q × f =50,491 GHz, τf = −15 ppm/°C). BZA + 1 wt% B2O3 showed 97.8 % simulated radiation efficiency and 5.95 dBi gain at 11.5 GHz, with low loss and high thermal stability, promising for mobile communication base stations.
| Original language | English |
|---|---|
| Article number | 185899 |
| Journal | Journal of Alloys and Compounds |
| Volume | 1051 |
| DOIs | |
| State | Published - 25 Jan 2026 |
Keywords
- 5 G/6 G
- BaZnAlO
- CDRA
- Microwave dielectric ceramics
- Ultra-low loss
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