TY - JOUR
T1 - Design of a large displacement thermal actuator with a cascaded V-beam amplification for MEMS safety-and-arming devices
AU - Li, Xiuyuan
AU - Zhao, Yulong
AU - Hu, Tengjiang
AU - Xu, Wenju
AU - Zhao, You
AU - Bai, Yingwei
AU - Ren, Wei
N1 - Publisher Copyright:
© 2015, Springer-Verlag Berlin Heidelberg.
PY - 2015/11/24
Y1 - 2015/11/24
N2 - The design, fabrication and characterization of a large displacement thermal actuator with a cascaded V-beam amplification for MEMS safety-and-arming (SA) devices are presented. The device is comprised of two V-shape electrothermal actuators, a cascaded V-beam amplification and two mechanical sliders. Compared with conventional lever amplifications, the vertical anti-acceleration stiffness of V-beam amplifications is much larger, which can meet the need of high-acceleration weapons. The special design of two symmetric mechanical sliders can double the displacement to ensure the MEMS SA device in armed state. The whole device is fabricated on a SOI wafer and fabrication process is introduced. Under an applied voltage of 15 V, the displacement of the device is 231.78 μm with consuming power of 5.10 W and response time of 16 ms. The chip size of the actuator is about 4 mm × 5 mm × 0.5 mm. The proposed actuator possesses outstanding performance in miniaturization, low cost and easy integration with other parts of MEMS SA devices.
AB - The design, fabrication and characterization of a large displacement thermal actuator with a cascaded V-beam amplification for MEMS safety-and-arming (SA) devices are presented. The device is comprised of two V-shape electrothermal actuators, a cascaded V-beam amplification and two mechanical sliders. Compared with conventional lever amplifications, the vertical anti-acceleration stiffness of V-beam amplifications is much larger, which can meet the need of high-acceleration weapons. The special design of two symmetric mechanical sliders can double the displacement to ensure the MEMS SA device in armed state. The whole device is fabricated on a SOI wafer and fabrication process is introduced. Under an applied voltage of 15 V, the displacement of the device is 231.78 μm with consuming power of 5.10 W and response time of 16 ms. The chip size of the actuator is about 4 mm × 5 mm × 0.5 mm. The proposed actuator possesses outstanding performance in miniaturization, low cost and easy integration with other parts of MEMS SA devices.
UR - https://www.scopus.com/pages/publications/84942192330
U2 - 10.1007/s00542-015-2447-1
DO - 10.1007/s00542-015-2447-1
M3 - 文章
AN - SCOPUS:84942192330
SN - 0946-7076
VL - 21
SP - 2367
EP - 2374
JO - Microsystem Technologies
JF - Microsystem Technologies
IS - 11
ER -