Design and Testing of 1 kV H-bridge Power Electronics Building Block Based on 1.7 kV SiC MOSFET Module

  • Jun Wang
  • , Rolando Burgos
  • , Dushan Boroyevich
  • , Zeng Liu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

39 Scopus citations

Abstract

This paper presents a power electronics building block (PEBB) design based on 1.7 kV SiC MOSFET power modules. The PEBB power stage is an H-bridge circuit that can be cascaded to build modular converters. The evolution of PEBB architectures is introduced at the beginning and the specifications are given, followed by the design considerations and solutions of critical PEBB components. In particular, laminated DC bus, differential-mode inductor, smart gate driver, high noise-immunity digital control system, and DC-fed auxiliary power supply have been accomplished and demonstrated. Finally, a novel hybrid-current-mode switching-cycle control approach has been proposed and validated on a SiC-PEBB-based modular multilevel Buck converter (MMBC).

Original languageEnglish
Title of host publication2018 International Power Electronics Conference, IPEC-Niigata - ECCE Asia 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages3749-3756
Number of pages8
ISBN (Electronic)9784886864055
DOIs
StatePublished - 22 Oct 2018
Event8th International Power Electronics Conference, IPEC-Niigata - ECCE Asia 2018 - Niigata, Japan
Duration: 20 May 201824 May 2018

Publication series

Name2018 International Power Electronics Conference, IPEC-Niigata - ECCE Asia 2018

Conference

Conference8th International Power Electronics Conference, IPEC-Niigata - ECCE Asia 2018
Country/TerritoryJapan
CityNiigata
Period20/05/1824/05/18

Keywords

  • Power electronics building block
  • SiC MOS-FET
  • digital control system
  • smart gate driver
  • switching-cycle control

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