TY - GEN
T1 - Design and evaluation of a high performance silicon carbide MOSFET driver
AU - Wei, Zuoyu
AU - Yu, Kefan
AU - Li, Yuguo
AU - Yi, Hao
AU - Zhuo, Fang
AU - Wang, Feng
N1 - Publisher Copyright:
© 2019 IEEE.
PY - 2019/6
Y1 - 2019/6
N2 - In recent years, the technology of wide bandgap devices has developed rapidly and its commercialization also getting higher and higher. Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFETs) are gradually replacing traditional silicon-based devices such as IGBTs in high-voltage, high-frequency, higherature applications due to their higher breakdown filed strength, lower switching losses, better thermal stability and thermal conductivity [1]. Of course, this also puts higher requirements and challenges on the drive design of SiC MOSFETs. The gate drivers for conventional silicon-based devices cannot be directly applied to SiC MOSFETs [2]. And the mature silicon carbide driver products on the market are few and expensive. Therefore, a general drive design for discrete SiC MOSFETs is proposed here, with high switching frequency, reliable fault isolation, fast fault detection and very small size. It also clarifies the key points and important parameter calculation criteria of the proposed drive circuit, then builds a double pulse test (DPT) platform to evaluate the performance of the gate driver board.
AB - In recent years, the technology of wide bandgap devices has developed rapidly and its commercialization also getting higher and higher. Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFETs) are gradually replacing traditional silicon-based devices such as IGBTs in high-voltage, high-frequency, higherature applications due to their higher breakdown filed strength, lower switching losses, better thermal stability and thermal conductivity [1]. Of course, this also puts higher requirements and challenges on the drive design of SiC MOSFETs. The gate drivers for conventional silicon-based devices cannot be directly applied to SiC MOSFETs [2]. And the mature silicon carbide driver products on the market are few and expensive. Therefore, a general drive design for discrete SiC MOSFETs is proposed here, with high switching frequency, reliable fault isolation, fast fault detection and very small size. It also clarifies the key points and important parameter calculation criteria of the proposed drive circuit, then builds a double pulse test (DPT) platform to evaluate the performance of the gate driver board.
KW - Double pulse test
KW - Driver design
KW - High switching frequency
KW - SiC MOSFETs
UR - https://www.scopus.com/pages/publications/85071955342
U2 - 10.1109/PEDG.2019.8807482
DO - 10.1109/PEDG.2019.8807482
M3 - 会议稿件
AN - SCOPUS:85071955342
T3 - PEDG 2019 - 2019 IEEE 10th International Symposium on Power Electronics for Distributed Generation Systems
SP - 24
EP - 28
BT - PEDG 2019 - 2019 IEEE 10th International Symposium on Power Electronics for Distributed Generation Systems
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 10th IEEE International Symposium on Power Electronics for Distributed Generation Systems, PEDG 2019
Y2 - 3 June 2019 through 6 June 2019
ER -