TY - GEN
T1 - Design and Current Balancing Optimization of A 1700V/1000A Multi-chip SiC Power Module
AU - Yang, Junhui
AU - Gan, Yongmei
AU - Wang, Laili
AU - Zhao, Cheng
AU - Nie, Yan
AU - Ran, Li
N1 - Publisher Copyright:
© 2023 The Korean Institute of Power Electronics.
PY - 2023
Y1 - 2023
N2 - The rated current of a single SiC MOSFET is always less than 100A at a voltage rating higher than 1.2kV. Therefore, plenty of SiC MOSFET dies paralleled as multichip power modules to increase the current capacity. However, due to the asymmetric layout and the difference between chip parameters, there will be severe current imbalance in power modules, affecting the reliability. This paper presents a multi-chip 1700V/1000A SiC power module, consisting of 18 paralleled chips in each switch of the half-bridge topology. A serial of current balancing optimization method is proposed, including chip classification, the optimization of layout, power terminals and driver loop. Finally, the double pulse test (DPT) is conducted to verify the performance of the power module.
AB - The rated current of a single SiC MOSFET is always less than 100A at a voltage rating higher than 1.2kV. Therefore, plenty of SiC MOSFET dies paralleled as multichip power modules to increase the current capacity. However, due to the asymmetric layout and the difference between chip parameters, there will be severe current imbalance in power modules, affecting the reliability. This paper presents a multi-chip 1700V/1000A SiC power module, consisting of 18 paralleled chips in each switch of the half-bridge topology. A serial of current balancing optimization method is proposed, including chip classification, the optimization of layout, power terminals and driver loop. Finally, the double pulse test (DPT) is conducted to verify the performance of the power module.
KW - SiC power module
KW - current balancing optimization
KW - large current rating
UR - https://www.scopus.com/pages/publications/85170640250
U2 - 10.23919/ICPE2023-ECCEAsia54778.2023.10213542
DO - 10.23919/ICPE2023-ECCEAsia54778.2023.10213542
M3 - 会议稿件
AN - SCOPUS:85170640250
T3 - ICPE 2023-ECCE Asia - 11th International Conference on Power Electronics - ECCE Asia: Green World with Power Electronics
SP - 1952
EP - 1958
BT - ICPE 2023-ECCE Asia - 11th International Conference on Power Electronics - ECCE Asia
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 11th International Conference on Power Electronics - ECCE Asia, ICPE 2023-ECCE Asia
Y2 - 22 May 2023 through 25 May 2023
ER -