Deposition of PZT thin films by hybrid process comprising sol-gel method and laser ablation for microscanners

Z. J. Wang; J. Tsaur; R. Maeda; H. Kokawa

Deposition of PZT thin films by hybrid process comprising sol-gel method and laser ablation for microscanners

Z. J. Wang
, J. Tsaur
, R. Maeda
, H. Kokawa

Tohoku University
National Institute of Advanced Industrial Science and Technology

Research output: Contribution to conference › Paper › peer-review

1 Scopus citations

Abstract

Lead zirconate titanate (Pb(Zr_0.52Ti_0.48)O ₃: PZT) thin films were prepared on Pt/Ti/SiO₂/Si substrates by hybrid processing: sol-gel method and laser ablation. The preferred orientation of the PZT films obtained by the hybrid process can be controlled using the seed layer obtained by the sol-gel method. The remnant polarization and the coercive field of this film were 28.6 μC/cm² and 58.0 kV/cm, while the dielectric constant and loss values measured at 1 kHz were approximately 1050 and 0.045, respectively. The devices of micro mirrors were successfully fabricated through the PZT film deposition, lithography cyclotron resonance (ECR), reactive ion etching (RIE) and inductively coupled plasma (ICP) releasing processes. The scanning angle was about 6 ± 2 degrees by resonating two beams with AC 5Vp-p at the resonance frequency of 1975 Hz. The results indicated that the piezoelectric PZT films deposited by the hybrid process have sufficient actuation capability for MEMS application.

Original language	English
Pages	169-172
Number of pages	4
State	Published - 2005
Externally published	Yes
Event	2004 14th IEEE International Symposium on Applications of Ferroelectrics, ISAF-04. A Conference of the IEEE Ultrasonics, Feroelectrics, and Frequency Control Society (UFFC-S) - Montreal, Canada Duration: 23 Aug 2004 → 27 Aug 2004

Conference

Conference	2004 14th IEEE International Symposium on Applications of Ferroelectrics, ISAF-04. A Conference of the IEEE Ultrasonics, Feroelectrics, and Frequency Control Society (UFFC-S)
Country/Territory	Canada
City	Montreal
Period	23/08/04 → 27/08/04

Keywords

Ferroelectric properties
Laser ablation
Lead zirconate titanate (PZT)
Microscanner
Microstructure
Sol-gel method

Cite this

Wang, Z. J., Tsaur, J., Maeda, R., & Kokawa, H. (2005). Deposition of PZT thin films by hybrid process comprising sol-gel method and laser ablation for microscanners. 169-172. Paper presented at 2004 14th IEEE International Symposium on Applications of Ferroelectrics, ISAF-04. A Conference of the IEEE Ultrasonics, Feroelectrics, and Frequency Control Society (UFFC-S), Montreal, Canada.

Wang, Z. J. ; Tsaur, J. ; Maeda, R. et al. / Deposition of PZT thin films by hybrid process comprising sol-gel method and laser ablation for microscanners. Paper presented at 2004 14th IEEE International Symposium on Applications of Ferroelectrics, ISAF-04. A Conference of the IEEE Ultrasonics, Feroelectrics, and Frequency Control Society (UFFC-S), Montreal, Canada.4 p.

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title = "Deposition of PZT thin films by hybrid process comprising sol-gel method and laser ablation for microscanners",

abstract = "Lead zirconate titanate (Pb(Zr0.52Ti0.48)O 3: PZT) thin films were prepared on Pt/Ti/SiO2/Si substrates by hybrid processing: sol-gel method and laser ablation. The preferred orientation of the PZT films obtained by the hybrid process can be controlled using the seed layer obtained by the sol-gel method. The remnant polarization and the coercive field of this film were 28.6 μC/cm2 and 58.0 kV/cm, while the dielectric constant and loss values measured at 1 kHz were approximately 1050 and 0.045, respectively. The devices of micro mirrors were successfully fabricated through the PZT film deposition, lithography cyclotron resonance (ECR), reactive ion etching (RIE) and inductively coupled plasma (ICP) releasing processes. The scanning angle was about 6 ± 2 degrees by resonating two beams with AC 5Vp-p at the resonance frequency of 1975 Hz. The results indicated that the piezoelectric PZT films deposited by the hybrid process have sufficient actuation capability for MEMS application.",

keywords = "Ferroelectric properties, Laser ablation, Lead zirconate titanate (PZT), Microscanner, Microstructure, Sol-gel method",

author = "Wang, \{Z. J.\} and J. Tsaur and R. Maeda and H. Kokawa",

year = "2005",

language = "英语",

pages = "169--172",

note = "2004 14th IEEE International Symposium on Applications of Ferroelectrics, ISAF-04. A Conference of the IEEE Ultrasonics, Feroelectrics, and Frequency Control Society (UFFC-S) ; Conference date: 23-08-2004 Through 27-08-2004",

}

Wang, ZJ, Tsaur, J, Maeda, R & Kokawa, H 2005, 'Deposition of PZT thin films by hybrid process comprising sol-gel method and laser ablation for microscanners', Paper presented at 2004 14th IEEE International Symposium on Applications of Ferroelectrics, ISAF-04. A Conference of the IEEE Ultrasonics, Feroelectrics, and Frequency Control Society (UFFC-S), Montreal, Canada, 23/08/04 - 27/08/04 pp. 169-172.

Deposition of PZT thin films by hybrid process comprising sol-gel method and laser ablation for microscanners. / Wang, Z. J.; Tsaur, J.; Maeda, R. et al.
2005. 169-172 Paper presented at 2004 14th IEEE International Symposium on Applications of Ferroelectrics, ISAF-04. A Conference of the IEEE Ultrasonics, Feroelectrics, and Frequency Control Society (UFFC-S), Montreal, Canada.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Deposition of PZT thin films by hybrid process comprising sol-gel method and laser ablation for microscanners

AU - Wang, Z. J.

AU - Tsaur, J.

AU - Maeda, R.

AU - Kokawa, H.

PY - 2005

Y1 - 2005

N2 - Lead zirconate titanate (Pb(Zr0.52Ti0.48)O 3: PZT) thin films were prepared on Pt/Ti/SiO2/Si substrates by hybrid processing: sol-gel method and laser ablation. The preferred orientation of the PZT films obtained by the hybrid process can be controlled using the seed layer obtained by the sol-gel method. The remnant polarization and the coercive field of this film were 28.6 μC/cm2 and 58.0 kV/cm, while the dielectric constant and loss values measured at 1 kHz were approximately 1050 and 0.045, respectively. The devices of micro mirrors were successfully fabricated through the PZT film deposition, lithography cyclotron resonance (ECR), reactive ion etching (RIE) and inductively coupled plasma (ICP) releasing processes. The scanning angle was about 6 ± 2 degrees by resonating two beams with AC 5Vp-p at the resonance frequency of 1975 Hz. The results indicated that the piezoelectric PZT films deposited by the hybrid process have sufficient actuation capability for MEMS application.

AB - Lead zirconate titanate (Pb(Zr0.52Ti0.48)O 3: PZT) thin films were prepared on Pt/Ti/SiO2/Si substrates by hybrid processing: sol-gel method and laser ablation. The preferred orientation of the PZT films obtained by the hybrid process can be controlled using the seed layer obtained by the sol-gel method. The remnant polarization and the coercive field of this film were 28.6 μC/cm2 and 58.0 kV/cm, while the dielectric constant and loss values measured at 1 kHz were approximately 1050 and 0.045, respectively. The devices of micro mirrors were successfully fabricated through the PZT film deposition, lithography cyclotron resonance (ECR), reactive ion etching (RIE) and inductively coupled plasma (ICP) releasing processes. The scanning angle was about 6 ± 2 degrees by resonating two beams with AC 5Vp-p at the resonance frequency of 1975 Hz. The results indicated that the piezoelectric PZT films deposited by the hybrid process have sufficient actuation capability for MEMS application.

KW - Ferroelectric properties

KW - Laser ablation

KW - Lead zirconate titanate (PZT)

KW - Microscanner

KW - Microstructure

KW - Sol-gel method

UR - https://www.scopus.com/pages/publications/28144440776

M3 - 论文

AN - SCOPUS:28144440776

SP - 169

EP - 172

T2 - 2004 14th IEEE International Symposium on Applications of Ferroelectrics, ISAF-04. A Conference of the IEEE Ultrasonics, Feroelectrics, and Frequency Control Society (UFFC-S)

Y2 - 23 August 2004 through 27 August 2004

ER -

Deposition of PZT thin films by hybrid process comprising sol-gel method and laser ablation for microscanners

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